Indium-Gallium - Phosphide-Arsenide Quantum-Well Heterostructure Lasers Grown on Gallium-Arsenide Substrate by Liquid Phase Epitaxy (Miscibility)

Light emitting In(,1-x)Ga(,x)P(,1-z)As(,z)-In(,1-x')Ga(,x')P(,1-z')As(,z')quantum-well heterostructure platelet lasers grown on (100) GaAs substrate that are capable of operating continuously at room temperature (cw, 300 K) at a wavelength of 7700 (ANGSTROM), but with a limited operating life, as described. The shortest wavelength obtained in this study is 6600 (ANGSTROM) at 77 K. This is achieved by bandfilling of a quantum-well sample having a well thickness of (TURN) 200 (ANGSTROM). The liquid phase epitaxial (LPE) growth method, including a computer controlled stepping motor that is used for this work, is discussed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

1984

Author dc:creator

• Fuller, Brian Keith

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8502145

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69289