{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/69289"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/69289","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Indium-Gallium - Phosphide-Arsenide Quantum-Well Heterostructure Lasers Grown on Gallium-Arsenide Substrate by Liquid Phase Epitaxy (Miscibility)","abstract":"Light emitting In(,1-x)Ga(,x)P(,1-z)As(,z)-In(,1-x')Ga(,x')P(,1-z')As(,z')quantum-well heterostructure platelet lasers grown on (100) GaAs substrate that are capable of operating continuously at room temperature (cw, 300 K) at a wavelength of 7700 (ANGSTROM), but with a limited operating life, as described. The shortest wavelength obtained in this study is 6600 (ANGSTROM) at 77 K. This is achieved by bandfilling of a quantum-well sample having a well thickness of (TURN) 200 (ANGSTROM). The liquid phase epitaxial (LPE) growth method, including a computer controlled stepping motor that is used for this work, is discussed.","abstract_html":"Light emitting In(,1-x)Ga(,x)P(,1-z)As(,z)-In(,1-x')Ga(,x')P(,1-z')As(,z')quantum-well heterostructure platelet lasers grown on (100) GaAs substrate that are capable of operating continuously at room temperature (cw, 300 K) at a wavelength of 7700 (ANGSTROM), but with a limited operating life, as described. The shortest wavelength obtained in this study is 6600 (ANGSTROM) at 77 K. This is achieved by bandfilling of a quantum-well sample having a well thickness of (TURN) 200 (ANGSTROM). The liquid phase epitaxial (LPE) growth method, including a computer controlled stepping motor that is used for this work, is discussed.","abstract_has_math":false,"creators":["Fuller, Brian Keith"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1984,"date_issued":"1984","date_published":"1984","updated_at":"2026-07-22T22:26:00Z","subjects":["Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8502145"],"render_values":[{"text":"(UMI)AAI8502145","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/69289","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Fuller, Brian Keith"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["1984","2014-12-15T19:04:48Z","10000-01-01"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/69289","(UMI)AAI8502145"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Light emitting In(,1-x)Ga(,x)P(,1-z)As(,z)-In(,1-x')Ga(,x')P(,1-z')As(,z')quantum-well heterostructure platelet lasers grown on (100) GaAs substrate that are capable of operating continuously at room temperature (cw, 300 K) at a wavelength of 7700 (ANGSTROM), but with a limited operating life, as described. The shortest wavelength obtained in this study is 6600 (ANGSTROM) at 77 K. This is achieved by bandfilling of a quantum-well sample having a well thickness of (TURN) 200 (ANGSTROM). The liquid phase epitaxial (LPE) growth method, including a computer controlled stepping motor that is used for this work, is discussed.","Growth of In(,1-x)Ga(,x)P(,1-z)As(,z) at 767(DEGREES)C in the energy-gap range of 1.7 to 1.82 eV was difficult from melts having a supersaturation less than 20(DEGREES)C. This is believed to be due to a miscibility gap that exists for the InGaPAs alloy to these low crystal growth temperatures. The spontaneous emission spectrum of 1.82 eV bulk layer (in the immiscible region) exhibits two peaks, indicating crystal inhomogeneity. The immiscible region decreases in size with increasing growth temperature.","The more complicated alloy AlInGaPAs grown on a GaAs substrate by LPE is mentioned. Luminescence at 1.93 eV is shown for this layer, which was only partially studied.","Made available in DSpace on 2014-12-15T19:04:48Z (GMT). No. of bitstreams: 1 8502145.pdf: 3076754 bytes, checksum: 02e996ac155b92b5078add4b516fb728 (MD5) Previous issue date: 1984","Embargo set by: Seth Robbins for item 69455 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","119 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984."]},{"key":"dc:title","label":"Title","values":["Indium-Gallium - Phosphide-Arsenide Quantum-Well Heterostructure Lasers Grown on Gallium-Arsenide Substrate by Liquid Phase Epitaxy (Miscibility)"]}]}],"canonical_facts":{"dc:creator":["Fuller, Brian Keith"],"dc:date":["1984","2014-12-15T19:04:48Z","10000-01-01"],"dc:description":["Light emitting In(,1-x)Ga(,x)P(,1-z)As(,z)-In(,1-x')Ga(,x')P(,1-z')As(,z')quantum-well heterostructure platelet lasers grown on (100) GaAs substrate that are capable of operating continuously at room temperature (cw, 300 K) at a wavelength of 7700 (ANGSTROM), but with a limited operating life, as described. The shortest wavelength obtained in this study is 6600 (ANGSTROM) at 77 K. This is achieved by bandfilling of a quantum-well sample having a well thickness of (TURN) 200 (ANGSTROM). The liquid phase epitaxial (LPE) growth method, including a computer controlled stepping motor that is used for this work, is discussed.","Growth of In(,1-x)Ga(,x)P(,1-z)As(,z) at 767(DEGREES)C in the energy-gap range of 1.7 to 1.82 eV was difficult from melts having a supersaturation less than 20(DEGREES)C. This is believed to be due to a miscibility gap that exists for the InGaPAs alloy to these low crystal growth temperatures. The spontaneous emission spectrum of 1.82 eV bulk layer (in the immiscible region) exhibits two peaks, indicating crystal inhomogeneity. The immiscible region decreases in size with increasing growth temperature.","The more complicated alloy AlInGaPAs grown on a GaAs substrate by LPE is mentioned. Luminescence at 1.93 eV is shown for this layer, which was only partially studied.","Made available in DSpace on 2014-12-15T19:04:48Z (GMT). No. of bitstreams: 1 8502145.pdf: 3076754 bytes, checksum: 02e996ac155b92b5078add4b516fb728 (MD5) Previous issue date: 1984","Embargo set by: Seth Robbins for item 69455 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","119 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984."],"dc:identifier":["http://hdl.handle.net/2142/69289","(UMI)AAI8502145"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Indium-Gallium - Phosphide-Arsenide Quantum-Well Heterostructure Lasers Grown on Gallium-Arsenide Substrate by Liquid Phase Epitaxy (Miscibility)"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:00Z"}