Theoretical Studies of High Field, High Energy Transport in Gallium-Arsenide, Silicon and Heterostructures

The study of high field transport has been instrumental to the theory of many semiconductor devices based on, e.g., the Hilsum-Ridley-Watkins mechanism, impact ionization phenomena, and recently real space transfer. It will become even more important as device sizes approach submicron dimensions. Current interest in small devices concerns not only scaling down and VLSI (very large scale integration) but also phenomena such as size quantization, real space transfer, and velocity overshoot, which was recently termed ballistic transport.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Tang, Jeffrey Yuh-Fong

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8324654

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69259