{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/69259"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/69259","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Theoretical Studies of High Field, High Energy Transport in Gallium-Arsenide, Silicon and Heterostructures","abstract":"The study of high field transport has been instrumental to the theory of many semiconductor devices based on, e.g., the Hilsum-Ridley-Watkins mechanism, impact ionization phenomena, and recently real space transfer. It will become even more important as device sizes approach submicron dimensions. Current interest in small devices concerns not only scaling down and VLSI (very large scale integration) but also phenomena such as size quantization, real space transfer, and velocity overshoot, which was recently termed ballistic transport.","abstract_html":"The study of high field transport has been instrumental to the theory of many semiconductor devices based on, e.g., the Hilsum-Ridley-Watkins mechanism, impact ionization phenomena, and recently real space transfer. It will become even more important as device sizes approach submicron dimensions. Current interest in small devices concerns not only scaling down and VLSI (very large scale integration) but also phenomena such as size quantization, real space transfer, and velocity overshoot, which was recently termed ballistic transport.","abstract_has_math":false,"creators":["Tang, Jeffrey Yuh-Fong"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-15T19:04:34Z","date_published":"2014-12-15T19:04:34Z","updated_at":"2026-07-22T22:26:00Z","subjects":["Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8324654"],"render_values":[{"text":"(UMI)AAI8324654","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/69259","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Tang, Jeffrey Yuh-Fong"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-15T19:04:34Z","10000-01-01","1983"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/69259","(UMI)AAI8324654"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The study of high field transport has been instrumental to the theory of many semiconductor devices based on, e.g., the Hilsum-Ridley-Watkins mechanism, impact ionization phenomena, and recently real space transfer. It will become even more important as device sizes approach submicron dimensions. Current interest in small devices concerns not only scaling down and VLSI (very large scale integration) but also phenomena such as size quantization, real space transfer, and velocity overshoot, which was recently termed ballistic transport.","A Monte Carlo simulation, including a pseudopotential band structure, is chosen for this study. It is shown in this study that this method can be applied to both the steady state and the transient state transport problems.","The speed enhancement of injecting electrons over the Al(,x)Ga(,1-x)As-GaAs hetero-barrier is studied. The results show that a narrow "collision free window" exists with respect to parameters such as the electric field, the injection energy, the external voltage, and the semiconductor dimension. It is found that only emitter(source)- and base-like structures are eligible for collision-free transport; collectors(drains) are not because of unavoidable high voltage drops.","The emission of hot electrons from the silicon substrate to the silicon dioxide is studied. By a detailed investigation of the steady state transport phenomena in silicon, three sets of transport parameters are found. A Monte Carlo simulation which includes two realistic conduction bands and the spatial variation of the electric field is then performed to study the high energy tail of the distribution fuction.","Recently, the validity of the semiclassical Boltzmann transport equation has been reexamined and quantum corrections for the transport equation have been suggested. The quantum aspects of the transport problem are discussed. A quantum Monte Carlo method is proposed and various quantum effects are examined. The study indicates that the most important quantum correction is the self-energy effect which amounts to a quasi-particle Boltzmann transport equation. The intra-collisional field effect is shown not to be important in a steady state situation.","Made available in DSpace on 2014-12-15T19:04:34Z (GMT). No. of bitstreams: 1 8324654.pdf: 4503931 bytes, checksum: 0c3cf4c6fb1c85694ed864bb592db5a3 (MD5) Previous issue date: 1983","Embargo set by: Seth Robbins for item 69425 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","168 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1983."]},{"key":"dc:title","label":"Title","values":["Theoretical Studies of High Field, High Energy Transport in Gallium-Arsenide, Silicon and Heterostructures"]}]}],"canonical_facts":{"dc:creator":["Tang, Jeffrey Yuh-Fong"],"dc:date":["2014-12-15T19:04:34Z","10000-01-01","1983"],"dc:description":["The study of high field transport has been instrumental to the theory of many semiconductor devices based on, e.g., the Hilsum-Ridley-Watkins mechanism, impact ionization phenomena, and recently real space transfer. It will become even more important as device sizes approach submicron dimensions. Current interest in small devices concerns not only scaling down and VLSI (very large scale integration) but also phenomena such as size quantization, real space transfer, and velocity overshoot, which was recently termed ballistic transport.","A Monte Carlo simulation, including a pseudopotential band structure, is chosen for this study. It is shown in this study that this method can be applied to both the steady state and the transient state transport problems.","The speed enhancement of injecting electrons over the Al(,x)Ga(,1-x)As-GaAs hetero-barrier is studied. The results show that a narrow "collision free window" exists with respect to parameters such as the electric field, the injection energy, the external voltage, and the semiconductor dimension. It is found that only emitter(source)- and base-like structures are eligible for collision-free transport; collectors(drains) are not because of unavoidable high voltage drops.","The emission of hot electrons from the silicon substrate to the silicon dioxide is studied. By a detailed investigation of the steady state transport phenomena in silicon, three sets of transport parameters are found. A Monte Carlo simulation which includes two realistic conduction bands and the spatial variation of the electric field is then performed to study the high energy tail of the distribution fuction.","Recently, the validity of the semiclassical Boltzmann transport equation has been reexamined and quantum corrections for the transport equation have been suggested. The quantum aspects of the transport problem are discussed. A quantum Monte Carlo method is proposed and various quantum effects are examined. The study indicates that the most important quantum correction is the self-energy effect which amounts to a quasi-particle Boltzmann transport equation. The intra-collisional field effect is shown not to be important in a steady state situation.","Made available in DSpace on 2014-12-15T19:04:34Z (GMT). No. of bitstreams: 1 8324654.pdf: 4503931 bytes, checksum: 0c3cf4c6fb1c85694ed864bb592db5a3 (MD5) Previous issue date: 1983","Embargo set by: Seth Robbins for item 69425 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","168 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1983."],"dc:identifier":["http://hdl.handle.net/2142/69259","(UMI)AAI8324654"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Theoretical Studies of High Field, High Energy Transport in Gallium-Arsenide, Silicon and Heterostructures"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:00Z"}