Liquid Phase Epitaxial Indium-Gallium-Arsenide - Phosphide Avalanche Photodiodes for Near-Infrared Detection

The fabrication and characterization of InGaAsP/InP avalanche photodiodes for near-infrared detection is described in detail. Particular material requirements which must be satisfied for these devices are considered and the special techniques involved in the use of liquid phase epitaxy which have been developed for preparing such material will be discussed. The impact ionization coefficients in InP which are important for the design of low noise avalanche photodiodes have been experimentally determined. A special device structure consisting of an InP p-n junction for multiplication and an InGaAsP or InGaAs layer for absorption is presented which results in a substantial decrease in dark current over what is typically observed in simple InGaAsP p-n junctions.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Cook, Louis Walter

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8302838

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69236