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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 34 for “"p-n-junctions"”.
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Spectral response and conversion efficiency of P-N junctions
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering, 1962.
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Impedance and Other Properties of Gold Doped Silicon P-N Junctions
Made available in DSpace on 2014-12-08T22:24:25Z (GMT). No. of bitstreams: 1 6812191.pdf: 4236895 bytes, checksum: 7c0b3d52d5be2f1c883883905c3a13d9 (MD5) Previous issue date: 1968
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Anomalous Hall effect and persistent valley currents in graphene p-n junctions/
… valley currents. Our analysis reveals that p-n junctions in graphene support persistent valley currents that remain nonzero in the system ground state (in thermodynamic equilibrium). The valley currents can be controlled via the bias and gate voltages, enabling a variety of potentially useful …
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Application of Exact Steady-State Equivalent Circuit Model to Zinc-Doped Silicon P/n Junctions Under Forward Bias
Made available in DSpace on 2014-12-12T20:54:52Z (GMT). No. of bitstreams: 1 7913406.pdf: 3108620 bytes, checksum: 7952fee23315f91512a15310d7188acd (MD5) Previous issue date: 1978
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Polymer Light-Emitting Electrochemical Cells Enhanced with Bipolar Electrode Arrays: In Situ Doping and Formation of Multiple p-n Junctions
… over a thousand highly emissive light-emitting junctions. The clear doping and light-emission patterns greatly improve our understanding of the fundamental operation processes of the PLECs, and demonstrate that bipolar electrochemistry, realized with metallic wireless BPE, is an efficient way to …
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Carbon nanotube electronic structures as anti-corrosion coatings
… carbon nanotubes were deposited to form p-n junctions on steel substrates. It was demonstrated that the corrosion was indeed impeded by the potential barrier formed across an electronic p-n junction. Potentiodynamic measurements, Raman spectroscopy, impedance measurements and scanning …
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Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
… and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to the difficulties in defining abrupt junction geometry and escaping …
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Silicon-Based Molecular Nanotechnology: Fabrication and Characterization With the Scanning Tunneling Microscope
… electrical contacting scheme based on p-n junctions will be presented. Efficient STM potentiometric location of these p-n junctions suggests their additional use as alignment markers. Beyond outlining advances in molecular nanoelectronics, this thesis will also draw connections between …
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Liquid Phase Epitaxial Indium-Gallium-Arsenide - Phosphide Avalanche Photodiodes for Near-Infrared Detection
… what is typically observed in simple InGaAsP p-n junctions.
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HYDRODYNAMIC AND BALLISTIC TRANSPORT IN ULTRA-CLEAN 2D ELECTRON SYSTEMS
… effect of e-e interactions on tunnelling in p-n junctions and on photoresponse of a point contact in graphene.
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Cross-Sectional Scanning Tunneling Microscopy of Silicon-Based Heterostructures Andp-N Junctions
… ZnS/Si heterostructures, and Si p-n junctions. It is found on Si(111)2x1 that there is no preferential orientation for atomic steps, and the step structures are determined by the hexagonal symmetry of the atomic arrangement and the pi-bonded chains on Si(111)2x1. Two types of Si …
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Second order nonlinearities in silicon photonics
… silicon waveguide is studied. Using lateral p-n junctions, strong electric fields are introduced in the waveguides, demonstrating both electro-optic effects and second-harmonic generation. These results, together with a detailed modeling of the system, pave the way through the demonstration of …
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THERMAL AND THERMOELECTRIC PROPERTIES OF TWO-DIMENSIONAL HETEROSTRUCTURES
… and thermoelectric transport in MoS2/WSe2 p-n junctions. Our studies provide reference for the design of electronic/optoelectronic devices based on 2D heterostructures regarding heat management, and indicate 2D semiconductors as promising candidates for potential thermoelectric applications.
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Computer simulation of electron transport in solids with applications to materials analysis and characterization
… for the study of image contrast in silicon p-n junctions, for line-scan calculations of resist materials with given geometrical cross-sections deposited on silicon substrates, etc. The aim of this work is to investigate some physical problems related to the transport of electrons in solid …
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Computational studies of electronic structure of doped graphene
… large number of applications of graphene in p-n junctions, transistors, photodiodes and lasers. By utilizing single heteroatom chemical doping method or electric field-induced method, one can introduce a band gap, ranging from 0.1eV to 0.5eV, in graphene. A tunable bandgap is highly desirable …
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Structural studies of cadmium telluride thin films
… present when produced using this method. P - N junctions and working solar cells were produced and the dependence of the efficiency of the cells on the top n type layer thickness and incident doping ratio found. Electrical measurements were made on the solar cells but the efficiency was found to …
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An investigation of the microwave upset of avionic circuitry
… high packing densities, small device p-n junctions and very high clock rates, will be very susceptible to interference throughout the microwave band It has been postulated that the mechanism for this upset is demodulation and that it will come about by either the predicted changes in the …
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Electroquasistatic sensors for surface and subsurface nano-imaging of integrated circuit features
… the surface of doped silicon and locate p-n junctions and doped wells. Arrays of coplanar EQS sensors are scanned laterally over the surface of a doped silicon bulk at a fixed scan height. Electric fields from the driven EQS sensor array are capable of penetrating the surface of the …
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Simulation of implantation and diffusion processes for electro-thermal microcantilevers
… representative of the two kinds of p-n junctions in the “transistor” or the back-to-back diode configuration are used for doping simulations. Antimony (Sb) and Boron (B) were used as the respective n- and p-type doping species. The implantation and diffusion parameters were optimized to …
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Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications
… with an attempt to demonstrate hBN/AlGaN p-n junctions. The current-voltage (I-V) characteristics of hBN/6H-SiC heterostructures were measured and the results were utilized to determine the band offsets of the hBN/6H-SiC heterojunctions. Electrical transport measurements of Silicon doped hBN …
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