Back to results
University of Illinois at Urbana-Champaign
Properties of the Nitrogen Isoelectronic Trap in the Group-Iii-v Semiconductor Alloys Gallium-Arsenide-Phosphide and Indium-Gallium-Phosphide
Abstract
dc:descriptionMade available in DSpace on 2014-12-10T19:07:05Z (GMT). No. of bitstreams: 1 7310045.pdf: 3083676 bytes, checksum: de2e080db9dfaaaaf257ff7b657b551c (MD5) Previous issue date: 1972
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 1972
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Scifres, Donald Ray
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI7310045
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/63028