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University of Illinois at Urbana-Champaign
Properties of the Nitrogen Isoelectronic Trap in the Group-Iii-v Semiconductor Alloys Gallium-Arsenide-Phosphide and Indium-Gallium-Phosphide
Abstract
dc:descriptionEmbargo set by: Seth Robbins for item 63215 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 1972
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Scifres, Donald Ray
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI7310045