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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 162 for “"phosphide"”.
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Indium-Gallium Phosphide-Arsenide - Gallium Arsenide-Phosphide Single Heterojunction Lasers
Made available in DSpace on 2014-12-12T20:54:13Z (GMT). No. of bitstreams: 1 7606730.pdf: 2847725 bytes, checksum: 538397f02a07c1415ab059d85212392e (MD5) Previous issue date: 1975
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Laser Operation of Solution-Grown Aluminum Gallium Arsenide Phosphide Andindium Gallium Phosphide
Made available in DSpace on 2015-05-12T22:38:43Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7206877.PDF: 1704856 bytes, checksum: 9ae38236ce311387ebe47a74a54ebe63 (MD5) Previous issue date: 1971
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Lifetime Spectra of Gallium Arsenide-Phosphide and Nitrogen-Doped Gallium Arsenide-Phosphide
Made available in DSpace on 2015-05-12T22:39:10Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7511795.PDF: 4228710 bytes, checksum: b6bf26e7d08a16c7f80c48cf235d52c1 (MD5) Previous issue date: 1974
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Lifetime spectra of gallium arsenide phosphide and nitrogen-doped gallium arsenide phosphide
Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-18T21:10:02Z No. of bitstreams: 1 1974_lee.pdf: 4550212 bytes, checksum: 90dd9031c1f8520031f387a0967a1e6a (MD5)
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Electrodeposition of gallium phosphide.
Thesis: M.S., Massachusetts Institute of Technology, Department of Electrical Engineering, 1973
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Photoluminescence Studies of the Nitrogen Isoelectronic Trap in Gallium Arsenide-Phosphide and Indium-Gallium Phosphide
Made available in DSpace on 2014-12-10T19:07:14Z (GMT). No. of bitstreams: 1 7405556.pdf: 2984409 bytes, checksum: 32d7ecff7a8789c4b36121c6c5ee6d00 (MD5) Previous issue date: 1973
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Optical Properties of Gallium Arsenide-Phosphide
Made available in DSpace on 2014-12-08T22:24:02Z (GMT). No. of bitstreams: 1 6706587.pdf: 3532310 bytes, checksum: e7a893c400dfca5546c781a1ba3ef887 (MD5) Previous issue date: 1966
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Liquid-Phase Epitaxial Growth and Properties of Indium-Gallium-Phosphide and Indium-Gallium Phosphide-Arsenide Injection Lasers
Made available in DSpace on 2015-05-13T15:21:57Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7606798.PDF: 3791228 bytes, checksum: f8c19a609446fb74d6eea0f1f0990f94 (MD5) Previous issue date: 1975
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Liquid Phase Epitaxial Growth and Luminescence Characteristics of Indium Gallium Phosphide Arsenide - Indium Phosphide Quantum-Well Heterostructures
Since the development of practical semiconductor devices, most work has concentrated on changing the device geometry to suit particular design constraints. However, within the last several years there has been an attempt to build an entirely new class of devices by modifying the electronic str
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Tunneling in the Iii-v Semiconductor Alloys Indium Gallium Phosphide, Gallium Aluminum Arsenide, and Gallium Arsenide Phosphide
Made available in DSpace on 2014-12-10T19:06:52Z (GMT). No. of bitstreams: 1 7212254.pdf: 3159809 bytes, checksum: 3806fd4032e22d4e943204391b117cec (MD5) Previous issue date: 1971
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Liquid-phase-epitaxial growth and properties of indium gallium phosphide and indium gallium phosphide arsenide injection lasers
Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-22T19:29:54Z No. of bitstreams: 1 1975_hitchens.pdf: 4073212 bytes, checksum: 83d0ce7d426078eaafd0df098ca21fa1 (MD5)
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Luminescence, Absorption, and Pressure Studies of Nitrogen-Doped and Nitrogen-Free Gallium Arsenide-Phosphide and Indium-Gallium-Phosphide
Made available in DSpace on 2015-05-13T15:22:01Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7624149.PDF: 3820930 bytes, checksum: e51ccddc0ba56fa044383103a1aeba74 (MD5) Previous issue date: 1976
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Preparation and Properties of Indium-Gallium-Phosphide
Made available in DSpace on 2015-05-12T22:38:54Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7317307.PDF: 3793534 bytes, checksum: d95be066fbf684ffbf4f92f1ea180865 (MD5) Previous issue date: 1972
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Encapsulation and Implantation Studies of Indium Phosphide
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982.
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Preparation and Properties of Indium Gallium Phosphide
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2012-01-09T20:28:13Z No. of bitstreams: 1 1972_macksey.pdf: 4176648 bytes, checksum: 59074b050fda219d0613092bdc527e22 (MD5)
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Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recombination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide
Made available in DSpace on 2015-05-12T22:39:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7411966.PDF: 3851014 bytes, checksum: cd1a4a475e1514b2d5520a344358ec96 (MD5) Previous issue date: 1973
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Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide
Submitted by Carly Hafner (chafner2@illinois.edu) on 2014-06-06T16:20:02Z No. of bitstreams: 1 1972_Scifres.pdf: 1983799 bytes, checksum: af0bafc6b6a5f1fddded6b4a13be36ac (MD5)
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Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recomination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-11-14T19:00:55Z No. of bitstreams: 1 1973_campbell.pdf: 4175372 bytes, checksum: ed3da0d70330dce9e8d913abbf574623 (MD5)
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Properties of the Nitrogen Isoelectronic Trap in the Group-Iii-v Semiconductor Alloys Gallium-Arsenide-Phosphide and Indium-Gallium-Phosphide
Made available in DSpace on 2014-12-10T19:07:05Z (GMT). No. of bitstreams: 1 7310045.pdf: 3083676 bytes, checksum: de2e080db9dfaaaaf257ff7b657b551c (MD5) Previous issue date: 1972
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Growth and characterization of gallium arsenide phosphide and gallium phosphide on silicon for III-V/Si multi-junction solar cells
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-08-01
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