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Showing 1 to 20 of 162 for “"phosphide"”.

  1. Indium-Gallium Phosphide-Arsenide - Gallium Arsenide-Phosphide Single Heterojunction Lasers

    Made available in DSpace on 2014-12-12T20:54:13Z (GMT). No. of bitstreams: 1 7606730.pdf: 2847725 bytes, checksum: 538397f02a07c1415ab059d85212392e (MD5) Previous issue date: 1975

    uiuc Repository record for Indium-Gallium Phosphide-Arsenide - Gallium Arsenide-Phosphide Single Heterojunction Lasers (opens in a new tab)

  2. Laser Operation of Solution-Grown Aluminum Gallium Arsenide Phosphide Andindium Gallium Phosphide

    Made available in DSpace on 2015-05-12T22:38:43Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7206877.PDF: 1704856 bytes, checksum: 9ae38236ce311387ebe47a74a54ebe63 (MD5) Previous issue date: 1971

    uiuc Repository record for Laser Operation of Solution-Grown Aluminum Gallium Arsenide Phosphide Andindium Gallium Phosphide (opens in a new tab)

  3. Lifetime Spectra of Gallium Arsenide-Phosphide and Nitrogen-Doped Gallium Arsenide-Phosphide

    Made available in DSpace on 2015-05-12T22:39:10Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7511795.PDF: 4228710 bytes, checksum: b6bf26e7d08a16c7f80c48cf235d52c1 (MD5) Previous issue date: 1974

    uiuc Repository record for Lifetime Spectra of Gallium Arsenide-Phosphide and Nitrogen-Doped Gallium Arsenide-Phosphide (opens in a new tab)

  4. Lifetime spectra of gallium arsenide phosphide and nitrogen-doped gallium arsenide phosphide

    Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-18T21:10:02Z No. of bitstreams: 1 1974_lee.pdf: 4550212 bytes, checksum: 90dd9031c1f8520031f387a0967a1e6a (MD5)

    uiuc Repository record for Lifetime spectra of gallium arsenide phosphide and nitrogen-doped gallium arsenide phosphide (opens in a new tab)

  5. Electrodeposition of gallium phosphide.

    Thesis: M.S., Massachusetts Institute of Technology, Department of Electrical Engineering, 1973

    mit Repository record for Electrodeposition of gallium phosphide. (opens in a new tab)

  6. Photoluminescence Studies of the Nitrogen Isoelectronic Trap in Gallium Arsenide-Phosphide and Indium-Gallium Phosphide

    Made available in DSpace on 2014-12-10T19:07:14Z (GMT). No. of bitstreams: 1 7405556.pdf: 2984409 bytes, checksum: 32d7ecff7a8789c4b36121c6c5ee6d00 (MD5) Previous issue date: 1973

    uiuc Repository record for Photoluminescence Studies of the Nitrogen Isoelectronic Trap in Gallium Arsenide-Phosphide and Indium-Gallium Phosphide (opens in a new tab)

  7. Optical Properties of Gallium Arsenide-Phosphide

    Made available in DSpace on 2014-12-08T22:24:02Z (GMT). No. of bitstreams: 1 6706587.pdf: 3532310 bytes, checksum: e7a893c400dfca5546c781a1ba3ef887 (MD5) Previous issue date: 1966

    uiuc Repository record for Optical Properties of Gallium Arsenide-Phosphide (opens in a new tab)

  8. Liquid-Phase Epitaxial Growth and Properties of Indium-Gallium-Phosphide and Indium-Gallium Phosphide-Arsenide Injection Lasers

    Made available in DSpace on 2015-05-13T15:21:57Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7606798.PDF: 3791228 bytes, checksum: f8c19a609446fb74d6eea0f1f0990f94 (MD5) Previous issue date: 1975

    uiuc Repository record for Liquid-Phase Epitaxial Growth and Properties of Indium-Gallium-Phosphide and Indium-Gallium Phosphide-Arsenide Injection Lasers (opens in a new tab)

  9. Liquid Phase Epitaxial Growth and Luminescence Characteristics of Indium Gallium Phosphide Arsenide - Indium Phosphide Quantum-Well Heterostructures

    Since the development of practical semiconductor devices, most work has concentrated on changing the device geometry to suit particular design constraints. However, within the last several years there has been an attempt to build an entirely new class of devices by modifying the electronic str

    uiuc Repository record for Liquid Phase Epitaxial Growth and Luminescence Characteristics of Indium Gallium Phosphide Arsenide - Indium Phosphide Quantum-Well Heterostructures (opens in a new tab)

  10. Tunneling in the Iii-v Semiconductor Alloys Indium Gallium Phosphide, Gallium Aluminum Arsenide, and Gallium Arsenide Phosphide

    Made available in DSpace on 2014-12-10T19:06:52Z (GMT). No. of bitstreams: 1 7212254.pdf: 3159809 bytes, checksum: 3806fd4032e22d4e943204391b117cec (MD5) Previous issue date: 1971

    uiuc Repository record for Tunneling in the Iii-v Semiconductor Alloys Indium Gallium Phosphide, Gallium Aluminum Arsenide, and Gallium Arsenide Phosphide (opens in a new tab)

  11. Liquid-phase-epitaxial growth and properties of indium gallium phosphide and indium gallium phosphide arsenide injection lasers

    Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-22T19:29:54Z No. of bitstreams: 1 1975_hitchens.pdf: 4073212 bytes, checksum: 83d0ce7d426078eaafd0df098ca21fa1 (MD5)

    uiuc Repository record for Liquid-phase-epitaxial growth and properties of indium gallium phosphide and indium gallium phosphide arsenide injection lasers (opens in a new tab)

  12. Luminescence, Absorption, and Pressure Studies of Nitrogen-Doped and Nitrogen-Free Gallium Arsenide-Phosphide and Indium-Gallium-Phosphide

    Made available in DSpace on 2015-05-13T15:22:01Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7624149.PDF: 3820930 bytes, checksum: e51ccddc0ba56fa044383103a1aeba74 (MD5) Previous issue date: 1976

    uiuc Repository record for Luminescence, Absorption, and Pressure Studies of Nitrogen-Doped and Nitrogen-Free Gallium Arsenide-Phosphide and Indium-Gallium-Phosphide (opens in a new tab)

  13. Preparation and Properties of Indium-Gallium-Phosphide

    Made available in DSpace on 2015-05-12T22:38:54Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7317307.PDF: 3793534 bytes, checksum: d95be066fbf684ffbf4f92f1ea180865 (MD5) Previous issue date: 1972

    uiuc Repository record for Preparation and Properties of Indium-Gallium-Phosphide (opens in a new tab)

  14. Encapsulation and Implantation Studies of Indium Phosphide

    Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982.

    uiuc Repository record for Encapsulation and Implantation Studies of Indium Phosphide (opens in a new tab)

  15. Preparation and Properties of Indium Gallium Phosphide

    Submitted by Jesse Garrison (jagarris@illinois.edu) on 2012-01-09T20:28:13Z No. of bitstreams: 1 1972_macksey.pdf: 4176648 bytes, checksum: 59074b050fda219d0613092bdc527e22 (MD5)

    uiuc Repository record for Preparation and Properties of Indium Gallium Phosphide (opens in a new tab)

  16. Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recombination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide

    Made available in DSpace on 2015-05-12T22:39:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7411966.PDF: 3851014 bytes, checksum: cd1a4a475e1514b2d5520a344358ec96 (MD5) Previous issue date: 1973

    uiuc Repository record for Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recombination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide (opens in a new tab)

  17. Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide

    Submitted by Carly Hafner (chafner2@illinois.edu) on 2014-06-06T16:20:02Z No. of bitstreams: 1 1972_Scifres.pdf: 1983799 bytes, checksum: af0bafc6b6a5f1fddded6b4a13be36ac (MD5)

    uiuc Repository record for Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide (opens in a new tab)

  18. Properties of the Nitrogen Isoelectronic Trap in the Group-Iii-v Semiconductor Alloys Gallium-Arsenide-Phosphide and Indium-Gallium-Phosphide

    Made available in DSpace on 2014-12-10T19:07:05Z (GMT). No. of bitstreams: 1 7310045.pdf: 3083676 bytes, checksum: de2e080db9dfaaaaf257ff7b657b551c (MD5) Previous issue date: 1972

    uiuc Repository record for Properties of the Nitrogen Isoelectronic Trap in the Group-Iii-v Semiconductor Alloys Gallium-Arsenide-Phosphide and Indium-Gallium-Phosphide (opens in a new tab)

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