Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide

Scifres, Donald Ray

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University of Illinois at Urbana-Champaign

Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide

dc:creator Scifres, Donald Ray

dc:date2014

Abstract

dc:description

Restriction data tranferred 2014-07-01T11:27:14-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis

Degree

thesis:*

Grantor: University of Illinois at Urbana-Champaign
Year dc:date: 2014

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Scifres, Donald Ray
Contributors dc:contributor: Holonyak, Nick, Jr.
Koehler, James S.
Verdeyen, Joseph T.
Streetman, B.G.
Jordan, E.C.

Subjects

dc:subject × 1

Nitrogen

Rights

dc:rights

Identifiers

dc:identifier.*

Identifier: 3582715
OAI record oai:identifier: https://www.ideals.illinois.edu/oai-pmh?verb=GetRecord&metadataPrefix=etdms&identifier=oai%3Awww.ideals.illinois.edu%3A2142%2F49910

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Harvested from: University of Illinois - Urbana-Champaign
Base URL: www.ideals.illinois.edu/oai-pmh
Last updated: 2026-07-22
Source record: OAI-PMH GetRecord

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citation

Scifres, Donald Ray. Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide. University of Illinois at Urbana-Champaign, 2014. http://hdl.handle.net/2142/49910

Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide

Abstract

Degree

Author and committee

Subjects

Rights

Identifiers

Chain of custody

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