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University of Illinois at Urbana-Champaign
Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide
Abstract
dc:descriptionSubmitted by Carly Hafner (chafner2@illinois.edu) on 2014-06-06T16:20:02Z No. of bitstreams: 1 1972_Scifres.pdf: 1983799 bytes, checksum: af0bafc6b6a5f1fddded6b4a13be36ac (MD5)
Degree
thesis:*- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Scifres, Donald Ray
- Contributors dc:contributor
-
- Holonyak, Nick, Jr.
- Koehler, James S.
- Verdeyen, Joseph T.
- Streetman, B.G.
- Jordan, E.C.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- ©1972 Donald Ray Scifres
Identifiers
dc:identifier.*- Identifier
- 3582715
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/49910