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University of Illinois at Urbana-Champaign

Generation-Recombination Noise in Gold-Doped Silicon Mos Transistors

Abstract

dc:description

Made available in DSpace on 2014-12-08T22:24:35Z (GMT). No. of bitstreams: 1 6915424.pdf: 2506667 bytes, checksum: efd71ab4aa16e113e90d49080bfb44d7 (MD5) Previous issue date: 1969

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2014

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Yau, Leopoldo Dy

Subjects

dc:subject × 1

Identifiers

dc:identifier.*
Identifier
(UMI)AAI6915424
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/59703

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Yau, Leopoldo Dy. Generation-Recombination Noise in Gold-Doped Silicon Mos Transistors. Dissertation thesis, University of Illinois at Urbana-Champaign, 2014. http://hdl.handle.net/2142/59703