Pyroelectric emission from PbZr20Ti80O3 emitter coupled on silicon heater

This thesis reports pyroelectric emission from high frequency epitaxial 60 nm thick PbZr20Ti80O3 (PZT) film emitters coupled on silicon heater. The silicon heater is designed for generating joule heating on heater regions using low dosage ion implantation, while bridging electric connection on leg areas from high doped silicon. Sharp nano-meter scale tip arrays are fabricated to concentrate electrons on surface asperity and reduce external electric field for electron emission. 250nm thick platinum metal line on the device is connected to electric supply to apply heating voltage on the device. The measurements using Raman spectroscopy and oscilloscope shows that the fabricated device heats up 120 °C from room temperature in 10ms, whose average heating rate is 8850 °C/s. With high heating rate, pyroelectric emission occurs in a 6.7 V/µm external electric field. Pyroelectric heating effect is shown in a followed cooling period, and generates more emission current with faster heating conditions. This thesis also presents simulation results that 886 nm thick pyroelectric films are capable of electrons tunneling into vacuum without external electric field.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Mechanical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Choi, Jangho

Contributors dc:contributor

• King, William P.

• Pyroelectricity
• Electron emission
• Lead zirconate titanate
• Electric fields
• Pyroelectric effects
• Silicon heater
• MicroElectroMechanical systems

Statement dc:rights

• Copyright 2014 Jangho Choi

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/49396

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/49396