{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/49396"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/49396","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Pyroelectric emission from PbZr20Ti80O3 emitter coupled on silicon heater","abstract":"This thesis reports pyroelectric emission from high frequency epitaxial 60 nm thick PbZr20Ti80O3 (PZT) film emitters coupled on silicon heater. The silicon heater is designed for generating joule heating on heater regions using low dosage ion implantation, while bridging electric connection on leg areas from high doped silicon. Sharp nano-meter scale tip arrays are fabricated to concentrate electrons on surface asperity and reduce external electric field for electron emission. 250nm thick platinum metal line on the device is connected to electric supply to apply heating voltage on the device. The measurements using Raman spectroscopy and oscilloscope shows that the fabricated device heats up 120 °C from room temperature in 10ms, whose average heating rate is 8850 °C/s. With high heating rate, pyroelectric emission occurs in a 6.7 V/µm external electric field. Pyroelectric heating effect is shown in a followed cooling period, and generates more emission current with faster heating conditions. This thesis also presents simulation results that 886 nm thick pyroelectric films are capable of electrons tunneling into vacuum without external electric field.","abstract_html":"This thesis reports pyroelectric emission from high frequency epitaxial 60 nm thick PbZr20Ti80O3 (PZT) film emitters coupled on silicon heater. The silicon heater is designed for generating joule heating on heater regions using low dosage ion implantation, while bridging electric connection on leg areas from high doped silicon. Sharp nano-meter scale tip arrays are fabricated to concentrate electrons on surface asperity and reduce external electric field for electron emission. 250nm thick platinum metal line on the device is connected to electric supply to apply heating voltage on the device. The measurements using Raman spectroscopy and oscilloscope shows that the fabricated device heats up 120 °C from room temperature in 10ms, whose average heating rate is 8850 °C/s. With high heating rate, pyroelectric emission occurs in a 6.7 V/µm external electric field. Pyroelectric heating effect is shown in a followed cooling period, and generates more emission current with faster heating conditions. This thesis also presents simulation results that 886 nm thick pyroelectric films are capable of electrons tunneling into vacuum without external electric field.","abstract_has_math":false,"creators":["Choi, Jangho"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Mechanical Engineering","degree_department":null,"school":null,"contributors":["King, William P."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-05-30T16:41:58Z","date_published":"2014-05-30T16:41:58Z","updated_at":"2026-07-22T22:25:38Z","subjects":["Pyroelectricity","Electron emission","Lead zirconate titanate","Electric fields","Pyroelectric effects","Silicon heater","MicroElectroMechanical systems"],"languages":["en"],"rights":["Copyright 2014 Jangho Choi"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/49396","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["King, William P."]},{"key":"dc:creator","label":"Author","values":["Choi, Jangho"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-05-30T16:41:58Z","2014-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Mechanical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Pyroelectricity","Electron emission","Lead zirconate titanate","Electric fields","Pyroelectric effects","Silicon heater","MicroElectroMechanical systems"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2014 Jangho Choi"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/49396"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This thesis reports pyroelectric emission from high frequency epitaxial 60 nm thick PbZr20Ti80O3 (PZT) film emitters coupled on silicon heater. The silicon heater is designed for generating joule heating on heater regions using low dosage ion implantation, while bridging electric connection on leg areas from high doped silicon. Sharp nano-meter scale tip arrays are fabricated to concentrate electrons on surface asperity and reduce external electric field for electron emission. 250nm thick platinum metal line on the device is connected to electric supply to apply heating voltage on the device. The measurements using Raman spectroscopy and oscilloscope shows that the fabricated device heats up 120 °C from room temperature in 10ms, whose average heating rate is 8850 °C/s. With high heating rate, pyroelectric emission occurs in a 6.7 V/µm external electric field. Pyroelectric heating effect is shown in a followed cooling period, and generates more emission current with faster heating conditions. This thesis also presents simulation results that 886 nm thick pyroelectric films are capable of electrons tunneling into vacuum without external electric field.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2014-05-01T19:52:14Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Choi_Jangho.docx: 8321556 bytes, checksum: 26b04c9bf871f1242837cef1d6e8afa4 (MD5) Choi_Jangho.pdf: 2350164 bytes, checksum: a9417e28a381e0abb07b8fc937823511 (MD5)","Made available in DSpace on 2014-05-30T16:41:58Z (GMT). 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Sharp nano-meter scale tip arrays are fabricated to concentrate electrons on surface asperity and reduce external electric field for electron emission. 250nm thick platinum metal line on the device is connected to electric supply to apply heating voltage on the device. The measurements using Raman spectroscopy and oscilloscope shows that the fabricated device heats up 120 °C from room temperature in 10ms, whose average heating rate is 8850 °C/s. With high heating rate, pyroelectric emission occurs in a 6.7 V/µm external electric field. Pyroelectric heating effect is shown in a followed cooling period, and generates more emission current with faster heating conditions. This thesis also presents simulation results that 886 nm thick pyroelectric films are capable of electrons tunneling into vacuum without external electric field.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2014-05-01T19:52:14Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Choi_Jangho.docx: 8321556 bytes, checksum: 26b04c9bf871f1242837cef1d6e8afa4 (MD5) Choi_Jangho.pdf: 2350164 bytes, checksum: a9417e28a381e0abb07b8fc937823511 (MD5)","Made available in DSpace on 2014-05-30T16:41:58Z (GMT). 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