Depositing highly crystalline thin film silicon for photovoltaic solar cells utilizing metal surface wave plasmas

This thesis aims to explore the ability of the Metal Surface Wave Plasma (MSWP) to create low damage, high speed deposited silicon thin films for solar photovoltaics. Studies characterizing thin films have been performed in the past, but very few utilizing the MSWP. Due to the high electron densities and low electron temperatures characteristic of MSWPs, it is shown that this type of plasma is an ideal candidate for large area, high speed, low damage thin film deposition. The quantitative methods of examining films created by the MSWP system are analyzed through a series of diagnostic tools including: scanning electron microscopy, transmission electron microscopy, profilometry, x-ray diffraction and Raman spectroscopy. This work comprehensively discusses and compares different analytical techniques and methodologies – a shortcoming of prior works. In addition, it is demonstrated that the MSWP system can deposit tandem junction morphologies, ranging from microcrystalline to amorphous silicon films. This validates MSWPs as a robust PECVD source to deposit thin films quickly, yet flexible enough to deposit both amorphous and microcrystalline silicon.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Nuclear, Plasma, & Radiological Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Zonooz, Piyum

Contributors dc:contributor

• Ruzic, David N.

• Metal Surface Wave Plasma
• Raman Spectroscopy
• Micro-Crystalline Silicon
• X-Ray Diffraction (XRD)
• Grain Size

Statement dc:rights

• Copyright 2013 Piyum Zonooz

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/46597

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/46597