Fabrication and characterization of resonant cavity light-emitting transistors

The development of optical interconnects and optical communication has enabled high-speed, energy-efficient and reliable data transmission in supercomputers and communication networks. Nowadays, with the improvement in computer processing speed, higher data transmission rate is required to enhance the overall performance of electronics. Light-emitting transistors (LETs) are attractive optical signal sources because of their inherent dynamic charge transport mechanism in the base terminal. LETs have demonstrated GHz modulation capability, and in order to further improve the emission intensity and spectral purity, resonant cavity is introduced into the LET structure. Resonant cavity light-emitting transistors (RCLETs) have demonstrated up to 68% enhancement in the peak emission intensity and narrower emission peak compared with conventional LETs. The work described in this thesis involves the fabrication process and device characterization of the RCLETs.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2013

Author dc:creator

• Liu, Michael

Contributors dc:contributor

• Feng, Milton

• Resonant Cavity
• Light-Emitting Transistors
• Resonant Cavity Light-Emitting Transistors

Statement dc:rights

• Copyright 2013 Michael Liu

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/44489

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/44489