{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/44489"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/44489","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Fabrication and characterization of resonant cavity light-emitting transistors","abstract":"The development of optical interconnects and optical communication has enabled high-speed, energy-efficient and reliable data transmission in supercomputers and communication networks. Nowadays, with the improvement in computer processing speed, higher data transmission rate is required to enhance the overall performance of electronics. Light-emitting transistors (LETs) are attractive optical signal sources because of their inherent dynamic charge transport mechanism in the base terminal. LETs have demonstrated GHz modulation capability, and in order to further improve the emission intensity and spectral purity, resonant cavity is introduced into the LET structure. Resonant cavity light-emitting transistors (RCLETs) have demonstrated up to 68% enhancement in the peak emission intensity and narrower emission peak compared with conventional LETs. The work described in this thesis involves the fabrication process and device characterization of the RCLETs.","abstract_html":"The development of optical interconnects and optical communication has enabled high-speed, energy-efficient and reliable data transmission in supercomputers and communication networks. Nowadays, with the improvement in computer processing speed, higher data transmission rate is required to enhance the overall performance of electronics. Light-emitting transistors (LETs) are attractive optical signal sources because of their inherent dynamic charge transport mechanism in the base terminal. LETs have demonstrated GHz modulation capability, and in order to further improve the emission intensity and spectral purity, resonant cavity is introduced into the LET structure. Resonant cavity light-emitting transistors (RCLETs) have demonstrated up to 68% enhancement in the peak emission intensity and narrower emission peak compared with conventional LETs. The work described in this thesis involves the fabrication process and device characterization of the RCLETs.","abstract_has_math":false,"creators":["Liu, Michael"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2013,"date_issued":"2013-05-24T22:18:01Z","date_published":"2013-05-24T22:18:01Z","updated_at":"2026-07-22T22:25:34Z","subjects":["Resonant Cavity","Light-Emitting Transistors","Resonant Cavity Light-Emitting Transistors"],"languages":["en"],"rights":["Copyright 2013 Michael Liu"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/44489","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Liu, Michael"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2013-05-24T22:18:01Z","2015-05-24T10:01:04Z","2013-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Resonant Cavity","Light-Emitting Transistors","Resonant Cavity Light-Emitting Transistors"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2013 Michael Liu"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/44489"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The development of optical interconnects and optical communication has enabled high-speed, energy-efficient and reliable data transmission in supercomputers and communication networks. Nowadays, with the improvement in computer processing speed, higher data transmission rate is required to enhance the overall performance of electronics. Light-emitting transistors (LETs) are attractive optical signal sources because of their inherent dynamic charge transport mechanism in the base terminal. LETs have demonstrated GHz modulation capability, and in order to further improve the emission intensity and spectral purity, resonant cavity is introduced into the LET structure. Resonant cavity light-emitting transistors (RCLETs) have demonstrated up to 68% enhancement in the peak emission intensity and narrower emission peak compared with conventional LETs. The work described in this thesis involves the fabrication process and device characterization of the RCLETs.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-04-08T17:41:41Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Liu_Michael.pdf: 2104255 bytes, checksum: fcede4879078736dfa2e6d4531b43093 (MD5)","Made available in DSpace on 2013-05-24T22:18:01Z (GMT). No. of bitstreams: 2 Michael_Liu.pdf: 2088232 bytes, checksum: 7967e8f726ed80ead805a7df70a7a722 (MD5) license.txt: 4059 bytes, checksum: 9b29e8bcedbe73d9047dd86cac2be0bf (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Seth Robbins (srobbins@illinois.edu) on 2013-05-24T22:19:24Z Item is restricted until 2015-05-24T22:18:31Z","Restriction data tranferred 2014-07-01T11:36:20-05:00 Original Data Group with Access UIUC Users [automated] Release Date: 2015-05-24 17:18:31 UTC Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 44462 on 2015-05-24T10:01:04Z."]},{"key":"dc:title","label":"Title","values":["Fabrication and characterization of resonant cavity light-emitting transistors"]}]}],"canonical_facts":{"dc:contributor":["Feng, Milton"],"dc:creator":["Liu, Michael"],"dc:date":["2013-05-24T22:18:01Z","2015-05-24T10:01:04Z","2013-05"],"dc:description":["The development of optical interconnects and optical communication has enabled high-speed, energy-efficient and reliable data transmission in supercomputers and communication networks. Nowadays, with the improvement in computer processing speed, higher data transmission rate is required to enhance the overall performance of electronics. Light-emitting transistors (LETs) are attractive optical signal sources because of their inherent dynamic charge transport mechanism in the base terminal. LETs have demonstrated GHz modulation capability, and in order to further improve the emission intensity and spectral purity, resonant cavity is introduced into the LET structure. Resonant cavity light-emitting transistors (RCLETs) have demonstrated up to 68% enhancement in the peak emission intensity and narrower emission peak compared with conventional LETs. The work described in this thesis involves the fabrication process and device characterization of the RCLETs.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-04-08T17:41:41Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Liu_Michael.pdf: 2104255 bytes, checksum: fcede4879078736dfa2e6d4531b43093 (MD5)","Made available in DSpace on 2013-05-24T22:18:01Z (GMT). No. of bitstreams: 2 Michael_Liu.pdf: 2088232 bytes, checksum: 7967e8f726ed80ead805a7df70a7a722 (MD5) license.txt: 4059 bytes, checksum: 9b29e8bcedbe73d9047dd86cac2be0bf (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Seth Robbins (srobbins@illinois.edu) on 2013-05-24T22:19:24Z Item is restricted until 2015-05-24T22:18:31Z","Restriction data tranferred 2014-07-01T11:36:20-05:00 Original Data Group with Access UIUC Users [automated] Release Date: 2015-05-24 17:18:31 UTC Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 44462 on 2015-05-24T10:01:04Z."],"dc:identifier":["http://hdl.handle.net/2142/44489"],"dc:language":["en"],"dc:rights":["Copyright 2013 Michael Liu"],"dc:subject":["Resonant Cavity","Light-Emitting Transistors","Resonant Cavity Light-Emitting Transistors"],"dc:title":["Fabrication and characterization of resonant cavity light-emitting transistors"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:34Z"}