Size Dependence of the Electrical Characteristics of Silicon Nanoparticles

We studied the electronic properties of silicon nanoparticles with sizes rang- ing from 2.9 to 1 nm in diameter. Using a scanning tunneling microscope we studied the electronic structure of the particles. Resonant tunneling through hole states was observed when the samples were excited with light. The energy levels of these hole states were matched to theoretical models and the mass of the holes was determined. In addition, the Coulomb blockade e ect was observed in the tunneling experiments. This e ect was used to determine the dielectric constant of the particles. Both the hole mass and the dielectric constant are of importance to many fields, such as electronics, optoelectronics, and optics, where silicon nanoparticles have applications.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2012

Author dc:creator

• Therrien, Joel Mathew

• silicon
• nanoparticles
• electrical characteristics
• optoelectronics
• weak confinement
• strong confinement
• dielectric constant
• spectral
• spectral sensitivity
• STM
• tunneling
• mass model
• resonate tunneling

Statement dc:rights

• 200 Therrien ©

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/35264

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/35264