Size Dependence of the Electrical Characteristics of Silicon Nanoparticles
We studied the electronic properties of silicon nanoparticles with sizes rang- ing from 2.9 to 1 nm in diameter. Using a scanning tunneling microscope we studied the electronic structure of the particles. Resonant tunneling through hole states was observed when the samples were excited with light. The energy levels of these hole states were matched to theoretical models and the mass of the holes was determined. In addition, the Coulomb blockade e ect was observed in the tunneling experiments. This e ect was used to determine the dielectric constant of the particles. Both the hole mass and the dielectric constant are of importance to many fields, such as electronics, optoelectronics, and optics, where silicon nanoparticles have applications.
silicon, nanoparticles, electrical characteristics, optoelectronics, weak confinement, strong confinement, dielectric constant, spectral, spectral sensitivity, STM, tunneling, mass model, resonate tunneling
University of Illinois - Urbana-Champaign
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