3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices

The simultaneous explosion of portable microelectronics devices and the rapid shrinking of microprocessor size have provided a tremendous motivation to scientists and engineers to continue the down-scaling of these devices. For several decades, innovations have allowed components such as transistors to be physically reduced in size, allowing the famous Moore's law to hold true. As these transistors approach the atomic scale, however, further reduction becomes less probable and practical. As new technologies overcome these limitations, they face new, unexpected problems, including the ability to accurately simulate and predict the behavior of these devices, and to manage the heat they generate. This work uses a 3D Monte Carlo (MC) simulator to investigate the electro-thermal behavior of quasi-one-dimensional electron gas (1DEG) multigate MOSFETs. In order to study these highly confined architectures, the inclusion of quantum correction becomes essential. To better capture the influence of carrier confinement, the electrostatically quantum-corrected full-band MC model has the added feature of being able to incorporate subband scattering. The scattering rate selection introduces quantum correction into carrier movement.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2012

Author dc:creator

• Mohamed, Mohamed

Contributors dc:contributor

• Ravaioli, Umberto
• Choquette, Kent D.
• Tucker, John R.
• Jain, Kanti

• Monte Carlo
• Multigate
• Self-heating
• Phonon transport
• Electron transport
• Short-channel Effects
• Quantum correction
• Multi-subband

Statement dc:rights

• Copyright 2012 Mohamed Mohamed

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/31963

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/31963