{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/31963"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/31963","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices","abstract":"The simultaneous explosion of portable microelectronics devices and the rapid shrinking of microprocessor size have provided a tremendous motivation to scientists and engineers to continue the down-scaling of these devices. For several decades, innovations have allowed components such as transistors to be physically reduced in size, allowing the famous Moore's law to hold true. As these transistors approach the atomic scale, however, further reduction becomes less probable and practical. As new technologies overcome these limitations, they face new, unexpected problems, including the ability to accurately simulate and predict the behavior of these devices, and to manage the heat they generate. This work uses a 3D Monte Carlo (MC) simulator to investigate the electro-thermal behavior of quasi-one-dimensional electron gas (1DEG) multigate MOSFETs. In order to study these highly confined architectures, the inclusion of quantum correction becomes essential. To better capture the influence of carrier confinement, the electrostatically quantum-corrected full-band MC model has the added feature of being able to incorporate subband scattering. The scattering rate selection introduces quantum correction into carrier movement.","abstract_html":"The simultaneous explosion of portable microelectronics devices and the rapid shrinking of microprocessor size have provided a tremendous motivation to scientists and engineers to continue the down-scaling of these devices. For several decades, innovations have allowed components such as transistors to be physically reduced in size, allowing the famous Moore's law to hold true. As these transistors approach the atomic scale, however, further reduction becomes less probable and practical. As new technologies overcome these limitations, they face new, unexpected problems, including the ability to accurately simulate and predict the behavior of these devices, and to manage the heat they generate. This work uses a 3D Monte Carlo (MC) simulator to investigate the electro-thermal behavior of quasi-one-dimensional electron gas (1DEG) multigate MOSFETs. In order to study these highly confined architectures, the inclusion of quantum correction becomes essential. To better capture the influence of carrier confinement, the electrostatically quantum-corrected full-band MC model has the added feature of being able to incorporate subband scattering. The scattering rate selection introduces quantum correction into carrier movement.","abstract_has_math":false,"creators":["Mohamed, Mohamed"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Ravaioli, Umberto","Choquette, Kent D.","Tucker, John R.","Jain, Kanti"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-06-27T21:21:44Z","date_published":"2012-06-27T21:21:44Z","updated_at":"2026-07-22T22:25:30Z","subjects":["Monte Carlo","Multigate","Self-heating","Phonon transport","Electron transport","Short-channel Effects","Quantum correction","Multi-subband"],"languages":["en"],"rights":["Copyright 2012 Mohamed Mohamed"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/31963","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Ravaioli, Umberto","Choquette, Kent D.","Tucker, John R.","Jain, Kanti"]},{"key":"dc:creator","label":"Author","values":["Mohamed, Mohamed"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012-06-27T21:21:44Z","2014-06-28T10:00:22Z","2012-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Monte Carlo","Multigate","Self-heating","Phonon transport","Electron transport","Short-channel Effects","Quantum correction","Multi-subband"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2012 Mohamed Mohamed"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/31963"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The simultaneous explosion of portable microelectronics devices and the rapid shrinking of microprocessor size have provided a tremendous motivation to scientists and engineers to continue the down-scaling of these devices. For several decades, innovations have allowed components such as transistors to be physically reduced in size, allowing the famous Moore's law to hold true. As these transistors approach the atomic scale, however, further reduction becomes less probable and practical. As new technologies overcome these limitations, they face new, unexpected problems, including the ability to accurately simulate and predict the behavior of these devices, and to manage the heat they generate. This work uses a 3D Monte Carlo (MC) simulator to investigate the electro-thermal behavior of quasi-one-dimensional electron gas (1DEG) multigate MOSFETs. In order to study these highly confined architectures, the inclusion of quantum correction becomes essential. To better capture the influence of carrier confinement, the electrostatically quantum-corrected full-band MC model has the added feature of being able to incorporate subband scattering. The scattering rate selection introduces quantum correction into carrier movement.","Item withdrawn by Rebecca Bryant (rabryant@illinois.edu) on 2012-04-18T19:39:12Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Mohamed_Mohamed.pdf: 2129309 bytes, checksum: 2406b710eba48360dc8e23c51974e0bd (MD5)","Made available in DSpace on 2012-06-27T21:21:44Z (GMT). No. of bitstreams: 2 Mohamed_Mohamed.pdf: 2129309 bytes, checksum: 2406b710eba48360dc8e23c51974e0bd (MD5) license.txt: 4064 bytes, checksum: 612683d152f72bed269366caf8a8b01d (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2012-06-27T21:24:40Z Item is restricted until 2014-06-27T21:24:27Z","Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2014-06-28T10:00:22Z Item was in collections: Dissertations and Theses - Electrical and Computer Engineering (ID: 446) Graduate Theses and Dissertations at Illinois (ID: 204) No. of bitstreams: 2 Mohamed_Mohamed.pdf: 2129309 bytes, checksum: 2406b710eba48360dc8e23c51974e0bd (MD5) license.txt: 4064 bytes, checksum: 612683d152f72bed269366caf8a8b01d (MD5)","Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2014-06-28T10:00:22Z"]},{"key":"dc:title","label":"Title","values":["3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices"]}]}],"canonical_facts":{"dc:contributor":["Ravaioli, Umberto","Choquette, Kent D.","Tucker, John R.","Jain, Kanti"],"dc:creator":["Mohamed, Mohamed"],"dc:date":["2012-06-27T21:21:44Z","2014-06-28T10:00:22Z","2012-05"],"dc:description":["The simultaneous explosion of portable microelectronics devices and the rapid shrinking of microprocessor size have provided a tremendous motivation to scientists and engineers to continue the down-scaling of these devices. For several decades, innovations have allowed components such as transistors to be physically reduced in size, allowing the famous Moore's law to hold true. As these transistors approach the atomic scale, however, further reduction becomes less probable and practical. As new technologies overcome these limitations, they face new, unexpected problems, including the ability to accurately simulate and predict the behavior of these devices, and to manage the heat they generate. This work uses a 3D Monte Carlo (MC) simulator to investigate the electro-thermal behavior of quasi-one-dimensional electron gas (1DEG) multigate MOSFETs. In order to study these highly confined architectures, the inclusion of quantum correction becomes essential. To better capture the influence of carrier confinement, the electrostatically quantum-corrected full-band MC model has the added feature of being able to incorporate subband scattering. The scattering rate selection introduces quantum correction into carrier movement.","Item withdrawn by Rebecca Bryant (rabryant@illinois.edu) on 2012-04-18T19:39:12Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Mohamed_Mohamed.pdf: 2129309 bytes, checksum: 2406b710eba48360dc8e23c51974e0bd (MD5)","Made available in DSpace on 2012-06-27T21:21:44Z (GMT). No. of bitstreams: 2 Mohamed_Mohamed.pdf: 2129309 bytes, checksum: 2406b710eba48360dc8e23c51974e0bd (MD5) license.txt: 4064 bytes, checksum: 612683d152f72bed269366caf8a8b01d (MD5)","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2012-06-27T21:24:40Z Item is restricted until 2014-06-27T21:24:27Z","Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2014-06-28T10:00:22Z Item was in collections: Dissertations and Theses - Electrical and Computer Engineering (ID: 446) Graduate Theses and Dissertations at Illinois (ID: 204) No. of bitstreams: 2 Mohamed_Mohamed.pdf: 2129309 bytes, checksum: 2406b710eba48360dc8e23c51974e0bd (MD5) license.txt: 4064 bytes, checksum: 612683d152f72bed269366caf8a8b01d (MD5)","Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2014-06-28T10:00:22Z"],"dc:identifier":["http://hdl.handle.net/2142/31963"],"dc:language":["en"],"dc:rights":["Copyright 2012 Mohamed Mohamed"],"dc:subject":["Monte Carlo","Multigate","Self-heating","Phonon transport","Electron transport","Short-channel Effects","Quantum correction","Multi-subband"],"dc:title":["3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:30Z"}