Interfacial studies of buried seminconductor surfaces

"X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(lll) and C6ofsemiconductor systems. The bulk of the noble-metal/Si(lll) work has centered on the Ag/Si(lll) system where the structure of the interface is dependent on the interfacial preparation. The results of the C6ofsemiconductor studies revealed C6o/Si(lll ), C6o/Si(l 00), and C6o/Ge(l 00) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(lll)-(7x7) surface were preserved. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 x 1) interfacial structure. These studies were performed in the traditional ""Bragg"" or reflection geometry. The use of the ""Laue"" or transmission geometry for similar structural studies was also evaluated."

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2012

Author dc:creator

• Aburano, Richard D.

Contributors dc:contributor

• Chiang, Tai-Chang

• X-ray scattering
• semiconductor interfaces
• buried surfaces
• surface science
• interface science
• crystal surface studies

Statement dc:rights

• © 1997 Richard D. Aburano

Language dc:language

en

Identifier

4038890

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/30771