{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/30771"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/30771","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Interfacial studies of buried seminconductor surfaces","abstract":"\"X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(lll) and C6ofsemiconductor systems. The bulk of the noble-metal/Si(lll) work has centered on the Ag/Si(lll) system where the structure of the interface is dependent on the interfacial preparation. The results of the C6ofsemiconductor studies revealed C6o/Si(lll ), C6o/Si(l 00), and C6o/Ge(l 00) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(lll)-(7x7) surface were preserved. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 x 1) interfacial structure. These studies were performed in the traditional \"\"Bragg\"\" or reflection geometry. The use of the \"\"Laue\"\" or transmission geometry for similar structural studies was also evaluated.\"","abstract_html":""X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(lll) and C6ofsemiconductor systems. The bulk of the noble-metal/Si(lll) work has centered on the Ag/Si(lll) system where the structure of the interface is dependent on the interfacial preparation. The results of the C6ofsemiconductor studies revealed C6o/Si(lll ), C6o/Si(l 00), and C6o/Ge(l 00) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(lll)-(7x7) surface were preserved. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 x 1) interfacial structure. These studies were performed in the traditional ""Bragg"" or reflection geometry. The use of the ""Laue"" or transmission geometry for similar structural studies was also evaluated."","abstract_has_math":false,"creators":["Aburano, Richard D."],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Chiang, Tai-Chang"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-04-26T20:36:56Z","date_published":"2012-04-26T20:36:56Z","updated_at":"2026-07-22T22:25:29Z","subjects":["X-ray scattering","semiconductor interfaces","buried surfaces","surface science","interface science","crystal surface studies"],"languages":["en"],"rights":["© 1997 Richard D. 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This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 x 1) interfacial structure. These studies were performed in the traditional \"\"Bragg\"\" or reflection geometry. The use of the \"\"Laue\"\" or transmission geometry for similar structural studies was also evaluated.\"","Submitted by Megan O'Donnell (mnodonn2@illinois.edu) on 2012-04-26T20:36:56Z No. of bitstreams: 1 1997_Aburano.pdf: 8031913 bytes, checksum: 146d1a0c2b55308134e4100ef2d9b186 (MD5)","Made available in DSpace on 2012-04-26T20:36:56Z (GMT). No. of bitstreams: 1 1997_Aburano.pdf: 8031913 bytes, checksum: 146d1a0c2b55308134e4100ef2d9b186 (MD5) Previous issue date: 1997","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Megan O'Donnell (mnodonn2@illinois.edu) on 2012-04-26T20:36:56Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:33:25-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: dissertation/thesis","dissertation/thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["Interfacial studies of buried seminconductor surfaces"]}]}],"canonical_facts":{"dc:contributor":["Chiang, Tai-Chang"],"dc:creator":["Aburano, Richard D."],"dc:date":["2012-04-26T20:36:56Z","10000-01-01","1997"],"dc:description":["\"X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(lll) and C6ofsemiconductor systems. The bulk of the noble-metal/Si(lll) work has centered on the Ag/Si(lll) system where the structure of the interface is dependent on the interfacial preparation. The results of the C6ofsemiconductor studies revealed C6o/Si(lll ), C6o/Si(l 00), and C6o/Ge(l 00) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(lll)-(7x7) surface were preserved. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 x 1) interfacial structure. These studies were performed in the traditional \"\"Bragg\"\" or reflection geometry. The use of the \"\"Laue\"\" or transmission geometry for similar structural studies was also evaluated.\"","Submitted by Megan O'Donnell (mnodonn2@illinois.edu) on 2012-04-26T20:36:56Z No. of bitstreams: 1 1997_Aburano.pdf: 8031913 bytes, checksum: 146d1a0c2b55308134e4100ef2d9b186 (MD5)","Made available in DSpace on 2012-04-26T20:36:56Z (GMT). No. of bitstreams: 1 1997_Aburano.pdf: 8031913 bytes, checksum: 146d1a0c2b55308134e4100ef2d9b186 (MD5) Previous issue date: 1997","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Megan O'Donnell (mnodonn2@illinois.edu) on 2012-04-26T20:36:56Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:33:25-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: dissertation/thesis","dissertation/thesis","U of I Only"],"dc:identifier":["4038890","http://hdl.handle.net/2142/30771"],"dc:language":["en"],"dc:rights":["© 1997 Richard D. Aburano"],"dc:subject":["X-ray scattering","semiconductor interfaces","buried surfaces","surface science","interface science","crystal surface studies"],"dc:title":["Interfacial studies of buried seminconductor surfaces"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:29Z"}