Compact device modeling and millimeter-wave oscillator design for III-V HBT technology

The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still maintaining impressive breakdown, linearity, and current driving characteristics. These traits make it a highly desirable device for both millimeter-wave and high-speed mixed-signal circuits. However, as the complexity of the circuits that can be realized with DHBTs increases, new compact large-signal models are needed to properly model the physical operation of these devices, because current models are based on older homojunction bipolar technology. A physically scalable DHBT model, the UIUC SDD2, is developed specifically for DHBT technology and shown to outperform the often-used VBIC model in both individual device modeling and full circuit simulation. Additionally, tunable clock generator and frequency synthesizer circuits implemented in an indium phosphide (InP) DHBT technology are designed, fabricated, and measured to show the ability of this technology to implement fully integrated sources with moderate power dissipation at millimeter-wave frequencies.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2012

Author dc:creator

• Stuenkel, Mark E.

Contributors dc:contributor

• Feng, Milton
• Rosenbaum, Elyse
• Jin, Jianming
• Schutt-Ainé, José E.

• double heterojunction bipolar transistor (DHBT)
• Modeling
• Oscillator
• Millimeter-Wave

Statement dc:rights

• Copyright 2011 Mark Eric Stuenkel

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/29484

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/29484