{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/29484"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/29484","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Compact device modeling and millimeter-wave oscillator design for III-V HBT technology","abstract":"The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still maintaining impressive breakdown, linearity, and current driving characteristics. These traits make it a highly desirable device for both millimeter-wave and high-speed mixed-signal circuits. However, as the complexity of the circuits that can be realized with DHBTs increases, new compact large-signal models are needed to properly model the physical operation of these devices, because current models are based on older homojunction bipolar technology. A physically scalable DHBT model, the UIUC SDD2, is developed specifically for DHBT technology and shown to outperform the often-used VBIC model in both individual device modeling and full circuit simulation. Additionally, tunable clock generator and frequency synthesizer circuits implemented in an indium phosphide (InP) DHBT technology are designed, fabricated, and measured to show the ability of this technology to implement fully integrated sources with moderate power dissipation at millimeter-wave frequencies.","abstract_html":"The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still maintaining impressive breakdown, linearity, and current driving characteristics. These traits make it a highly desirable device for both millimeter-wave and high-speed mixed-signal circuits. However, as the complexity of the circuits that can be realized with DHBTs increases, new compact large-signal models are needed to properly model the physical operation of these devices, because current models are based on older homojunction bipolar technology. A physically scalable DHBT model, the UIUC SDD2, is developed specifically for DHBT technology and shown to outperform the often-used VBIC model in both individual device modeling and full circuit simulation. Additionally, tunable clock generator and frequency synthesizer circuits implemented in an indium phosphide (InP) DHBT technology are designed, fabricated, and measured to show the ability of this technology to implement fully integrated sources with moderate power dissipation at millimeter-wave frequencies.","abstract_has_math":false,"creators":["Stuenkel, Mark E."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Feng, Milton","Rosenbaum, Elyse","Jin, Jianming","Schutt-Ainé, José E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-02-01T00:48:46Z","date_published":"2012-02-01T00:48:46Z","updated_at":"2026-07-22T22:25:27Z","subjects":["double heterojunction bipolar transistor (DHBT)","Modeling","Oscillator","Millimeter-Wave"],"languages":["en"],"rights":["Copyright 2011 Mark Eric Stuenkel"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/29484","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton","Rosenbaum, Elyse","Jin, Jianming","Schutt-Ainé, José E."]},{"key":"dc:creator","label":"Author","values":["Stuenkel, Mark E."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012-02-01T00:48:46Z","2014-02-01T11:00:30Z","2011-12"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["double heterojunction bipolar transistor (DHBT)","Modeling","Oscillator","Millimeter-Wave"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2011 Mark Eric Stuenkel"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/29484"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still maintaining impressive breakdown, linearity, and current driving characteristics. 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Additionally, tunable clock generator and frequency synthesizer circuits implemented in an indium phosphide (InP) DHBT technology are designed, fabricated, and measured to show the ability of this technology to implement fully integrated sources with moderate power dissipation at millimeter-wave frequencies.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-08-29T13:56:23Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Stuenkel_Mark.pdf: 1719778 bytes, checksum: 141e00adc4601643403b096f3243ff6c (MD5)","Made available in DSpace on 2012-02-01T00:48:46Z (GMT). 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These traits make it a highly desirable device for both millimeter-wave and high-speed mixed-signal circuits. However, as the complexity of the circuits that can be realized with DHBTs increases, new compact large-signal models are needed to properly model the physical operation of these devices, because current models are based on older homojunction bipolar technology. A physically scalable DHBT model, the UIUC SDD2, is developed specifically for DHBT technology and shown to outperform the often-used VBIC model in both individual device modeling and full circuit simulation. Additionally, tunable clock generator and frequency synthesizer circuits implemented in an indium phosphide (InP) DHBT technology are designed, fabricated, and measured to show the ability of this technology to implement fully integrated sources with moderate power dissipation at millimeter-wave frequencies.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-08-29T13:56:23Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Stuenkel_Mark.pdf: 1719778 bytes, checksum: 141e00adc4601643403b096f3243ff6c (MD5)","Made available in DSpace on 2012-02-01T00:48:46Z (GMT). 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