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University of Illinois - Urbana-Champaign

Degradation Studies of Ultrathin Silicon Oxide Under Electrical Stress Using a Scanning Tunneling Microscope

Abstract

dc:description

Submitted by Jesse Garrison (jagarris@illinois.edu) on 2012-01-17T18:25:40Z No. of bitstreams: 1 1999_hetrick.pdf: 3179100 bytes, checksum: 1456c9f34957d5afe213413ca490bce8 (MD5)

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Physics
Year dc:date
2012

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Hetrick, James Michael
Contributors dc:contributor
  • Nayfeh, Munir H.

Subjects

dc:subject × 4

Rights

dc:rights
Statement dc:rights
  • © 1999 James Michael Hetrick
Language dc:language
en

Identifiers

dc:identifier.*
Identifier
4272869
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/28653

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Hetrick, James Michael. Degradation Studies of Ultrathin Silicon Oxide Under Electrical Stress Using a Scanning Tunneling Microscope. Dissertation thesis, 2012. http://hdl.handle.net/2142/28653