Degradation Studies of Ultrathin Silicon Oxide Under Electrical Stress Using a Scanning Tunneling Microscope

Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Jesse Garrison (jagarris@illinois.edu) on 2012-01-17T18:25:41Z Item is restricted indefinitely.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2012

Author dc:creator

• Hetrick, James Michael

Contributors dc:contributor

• Nayfeh, Munir H.

• silicon oxide
• Ultrathin Films
• degradation
• Scanning Tunneling Microscopy (STM)

Statement dc:rights

• © 1999 James Michael Hetrick

Language dc:language

en

Identifier

4272869

OAI record oai:identifier

https://www.ideals.illinois.edu/oai-pmh?verb=GetRecord&metadataPrefix=etdms&identifier=oai%3Awww.ideals.illinois.edu%3A2142%2F28653