Abstract
dc:descriptionThe response of the reflectivity spectrum of single crystal GaAs to uniaxial stress in the (001) and (111) directions was determined. Interband transitions were detected at 1.425 t .015, 1.76 t .02, 2.89, 3.12, and 4.5 eVe The two lowest energy transitions are shown compatible with r symmetry, and the Pikus and Bir deformation potential ratio d/b ~ 3.2 is determined. Second harmonic response at 1.4 eV is shown in agreement with a rigid shift model for the strain perturbation. The 2.89 and 3.12 eV transitions exhibit modulated reflectivity lineshapes expected of A symmetry. Comparison is made with the stressmodulated response of a symmetry-related transition in germanium. The deformation potential ratios, D1/5 /Dl/l = -.55 ± .03, D35/D33 = .77 ± .03, have been derived. Comparison of the hydrostatic component of the perturbation with the energy derivative of the unmodulated reflectivity spectrum shows good agreement with a rigid shift model. Finally, the 4.5 eV transition has shown a response to the strain perturbation indicative of a Delta symmetry.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Physics
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Wells, James Everett
- Contributors dc:contributor
-
- Handler, Paul
Subjects
dc:subject × 4Rights
dc:rights- Statement dc:rights
-
- 1969 James Everett Wells
- Language dc:language
- en
Identifiers
dc:identifier.*- Identifier
- 6067691
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/25797