{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25797"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25797","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Piezoreflectance of gallium arsenide","abstract":"The response of the reflectivity spectrum of single crystal GaAs to uniaxial stress in the (001) and (111) directions was determined. Interband transitions were detected at 1.425 t .015, 1.76 t .02, 2.89, 3.12, and 4.5 eVe The two lowest energy transitions are shown compatible with r symmetry, and the Pikus and Bir deformation potential ratio d/b ~ 3.2 is determined. Second harmonic response at 1.4 eV is shown in agreement with a rigid shift model for the strain perturbation. The 2.89 and 3.12 eV transitions exhibit modulated reflectivity lineshapes expected of A symmetry. Comparison is made with the stressmodulated response of a symmetry-related transition in germanium. The deformation potential ratios, D1/5 /Dl/l = -.55 ± .03, D35/D33 = .77 ± .03, have been derived. Comparison of the hydrostatic component of the perturbation with the energy derivative of the unmodulated reflectivity spectrum shows good agreement with a rigid shift model. Finally, the 4.5 eV transition has shown a response to the strain perturbation indicative of a Delta symmetry.","abstract_html":"The response of the reflectivity spectrum of single crystal GaAs to uniaxial stress in the (001) and (111) directions was determined. Interband transitions were detected at 1.425 t .015, 1.76 t .02, 2.89, 3.12, and 4.5 eVe The two lowest energy transitions are shown compatible with r symmetry, and the Pikus and Bir deformation potential ratio d/b ~ 3.2 is determined. Second harmonic response at 1.4 eV is shown in agreement with a rigid shift model for the strain perturbation. The 2.89 and 3.12 eV transitions exhibit modulated reflectivity lineshapes expected of A symmetry. Comparison is made with the stressmodulated response of a symmetry-related transition in germanium. The deformation potential ratios, D1/5 /Dl/l = -.55 ± .03, D35/D33 = .77 ± .03, have been derived. Comparison of the hydrostatic component of the perturbation with the energy derivative of the unmodulated reflectivity spectrum shows good agreement with a rigid shift model. Finally, the 4.5 eV transition has shown a response to the strain perturbation indicative of a Delta symmetry.","abstract_has_math":false,"creators":["Wells, James Everett"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Handler, Paul"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-07-13T16:28:23Z","date_published":"2011-07-13T16:28:23Z","updated_at":"2026-07-22T22:25:26Z","subjects":["single crystal GaAs","piezoreflectance","Gallium Arsenide (GaAs)","reflectivity spectrum"],"languages":["en"],"rights":["1969 James Everett Wells"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["6067691"],"render_values":[{"text":"6067691","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25797","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Handler, Paul"]},{"key":"dc:creator","label":"Author","values":["Wells, James Everett"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-07-13T16:28:23Z","10000-01-01","1969"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["single crystal GaAs","piezoreflectance","Gallium Arsenide (GaAs)","reflectivity spectrum"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1969 James Everett Wells"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["6067691","http://hdl.handle.net/2142/25797"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The response of the reflectivity spectrum of single crystal GaAs to uniaxial stress in the (001) and (111) directions was determined. Interband transitions were detected at 1.425 t .015, 1.76 t .02, 2.89, 3.12, and 4.5 eVe The two lowest energy transitions are shown compatible with r symmetry, and the Pikus and Bir deformation potential ratio d/b ~ 3.2 is determined. Second harmonic response at 1.4 eV is shown in agreement with a rigid shift model for the strain perturbation. The 2.89 and 3.12 eV transitions exhibit modulated reflectivity lineshapes expected of A symmetry. Comparison is made with the stressmodulated response of a symmetry-related transition in germanium. The deformation potential ratios, D1/5 /Dl/l = -.55 ± .03, D35/D33 = .77 ± .03, have been derived. Comparison of the hydrostatic component of the perturbation with the energy derivative of the unmodulated reflectivity spectrum shows good agreement with a rigid shift model. Finally, the 4.5 eV transition has shown a response to the strain perturbation indicative of a Delta symmetry.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-13T16:28:23Z No. of bitstreams: 1 1969_wells.pdf: 4028196 bytes, checksum: 83efa8ef2fb187dbca503894a4eaaf2e (MD5)","Made available in DSpace on 2011-07-13T16:28:23Z (GMT). No. of bitstreams: 1 1969_wells.pdf: 4028196 bytes, checksum: 83efa8ef2fb187dbca503894a4eaaf2e (MD5) Previous issue date: 1969","Restriction data tranferred 2014-07-01T11:33:07-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-13T16:28:23Z Item is restricted indefinitely.","Thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["Piezoreflectance of gallium arsenide"]}]}],"canonical_facts":{"dc:contributor":["Handler, Paul"],"dc:creator":["Wells, James Everett"],"dc:date":["2011-07-13T16:28:23Z","10000-01-01","1969"],"dc:description":["The response of the reflectivity spectrum of single crystal GaAs to uniaxial stress in the (001) and (111) directions was determined. Interband transitions were detected at 1.425 t .015, 1.76 t .02, 2.89, 3.12, and 4.5 eVe The two lowest energy transitions are shown compatible with r symmetry, and the Pikus and Bir deformation potential ratio d/b ~ 3.2 is determined. Second harmonic response at 1.4 eV is shown in agreement with a rigid shift model for the strain perturbation. The 2.89 and 3.12 eV transitions exhibit modulated reflectivity lineshapes expected of A symmetry. Comparison is made with the stressmodulated response of a symmetry-related transition in germanium. The deformation potential ratios, D1/5 /Dl/l = -.55 ± .03, D35/D33 = .77 ± .03, have been derived. Comparison of the hydrostatic component of the perturbation with the energy derivative of the unmodulated reflectivity spectrum shows good agreement with a rigid shift model. Finally, the 4.5 eV transition has shown a response to the strain perturbation indicative of a Delta symmetry.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-13T16:28:23Z No. of bitstreams: 1 1969_wells.pdf: 4028196 bytes, checksum: 83efa8ef2fb187dbca503894a4eaaf2e (MD5)","Made available in DSpace on 2011-07-13T16:28:23Z (GMT). No. of bitstreams: 1 1969_wells.pdf: 4028196 bytes, checksum: 83efa8ef2fb187dbca503894a4eaaf2e (MD5) Previous issue date: 1969","Restriction data tranferred 2014-07-01T11:33:07-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-13T16:28:23Z Item is restricted indefinitely.","Thesis","U of I Only"],"dc:identifier":["6067691","http://hdl.handle.net/2142/25797"],"dc:language":["en"],"dc:rights":["1969 James Everett Wells"],"dc:subject":["single crystal GaAs","piezoreflectance","Gallium Arsenide (GaAs)","reflectivity spectrum"],"dc:title":["Piezoreflectance of gallium arsenide"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:26Z"}