The thermal boundary conductance between a thin ⁴He film and its substrate

Heat flow between the substrate and a thin 4He film is responsible for the signal strength and the Q of a third sound resonance cell. Careful analysis of the signal strength and Q for films between 1.35 and 4.40 atomic layers shows that the boundary conductance between a thin film and its substrate is three to five orders of magnitude smaller than the boundary conductance between bulk liquid helium and a solid. The conductance for the bulk case is the reciprocal of the Kapitza resistance. For the thin films studied, if the boundary conductance is proportional to Tn, n lies between six and eight. A possible mechanism for the boundary conductance is discussed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2011

Author dc:creator

• Rutledge, James Edward

Contributors dc:contributor

• Mochel, J.M.

• thermal boundary conductance
• thin film 4He
• third sound resonance cell
• thin film substrate

Statement dc:rights

• 1978 James Edward Rutledge

Language dc:language

en

Identifier

312173

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/25608