{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25608"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25608","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"The thermal boundary conductance between a thin ⁴He film and its substrate","abstract":"Heat flow between the substrate and a thin 4He film is responsible for the signal strength and the Q of a third sound resonance cell. Careful analysis of the signal strength and Q for films between 1.35 and 4.40 atomic layers shows that the boundary conductance between a thin film and its substrate is three to five orders of magnitude smaller than the boundary conductance between bulk liquid helium and a solid. The conductance for the bulk case is the reciprocal of the Kapitza resistance. For the thin films studied, if the boundary conductance is proportional to Tn, n lies between six and eight. A possible mechanism for the boundary conductance is discussed.","abstract_html":"Heat flow between the substrate and a thin 4He film is responsible for the signal strength and the Q of a third sound resonance cell. Careful analysis of the signal strength and Q for films between 1.35 and 4.40 atomic layers shows that the boundary conductance between a thin film and its substrate is three to five orders of magnitude smaller than the boundary conductance between bulk liquid helium and a solid. The conductance for the bulk case is the reciprocal of the Kapitza resistance. For the thin films studied, if the boundary conductance is proportional to Tn, n lies between six and eight. A possible mechanism for the boundary conductance is discussed.","abstract_has_math":false,"creators":["Rutledge, James Edward"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Mochel, J.M."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-07-01T14:18:04Z","date_published":"2011-07-01T14:18:04Z","updated_at":"2026-07-22T22:25:24Z","subjects":["thermal boundary conductance","thin film 4He","third sound resonance cell","thin film substrate"],"languages":["en"],"rights":["1978 James Edward Rutledge"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["312173"],"render_values":[{"text":"312173","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25608","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Mochel, J.M."]},{"key":"dc:creator","label":"Author","values":["Rutledge, James Edward"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-07-01T14:18:04Z","10000-01-01","1978"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["thermal boundary conductance","thin film 4He","third sound resonance cell","thin film substrate"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1978 James Edward Rutledge"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["312173","http://hdl.handle.net/2142/25608"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Heat flow between the substrate and a thin 4He film is responsible for the signal strength and the Q of a third sound resonance cell. Careful analysis of the signal strength and Q for films between 1.35 and 4.40 atomic layers shows that the boundary conductance between a thin film and its substrate is three to five orders of magnitude smaller than the boundary conductance between bulk liquid helium and a solid. The conductance for the bulk case is the reciprocal of the Kapitza resistance. For the thin films studied, if the boundary conductance is proportional to Tn, n lies between six and eight. A possible mechanism for the boundary conductance is discussed.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-01T14:18:04Z No. of bitstreams: 1 1978_rutledge.pdf: 1514305 bytes, checksum: 3846d94590a935ce8a2b86b75ba3823d (MD5)","Made available in DSpace on 2011-07-01T14:18:04Z (GMT). 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Careful analysis of the signal strength and Q for films between 1.35 and 4.40 atomic layers shows that the boundary conductance between a thin film and its substrate is three to five orders of magnitude smaller than the boundary conductance between bulk liquid helium and a solid. The conductance for the bulk case is the reciprocal of the Kapitza resistance. For the thin films studied, if the boundary conductance is proportional to Tn, n lies between six and eight. A possible mechanism for the boundary conductance is discussed.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-01T14:18:04Z No. of bitstreams: 1 1978_rutledge.pdf: 1514305 bytes, checksum: 3846d94590a935ce8a2b86b75ba3823d (MD5)","Made available in DSpace on 2011-07-01T14:18:04Z (GMT). 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