Electronic and optical properties of semiconductor quantum wells

In this thesis we study electronic and optical properties of GaAs-AlGaAs semiconductors quantum wells. The light and heavy hole subbands are strongly hybridized and this subband mixing has important effects on electronic and optical properties. A systematic study of the mixing effects on valence subband structure, exciton binding energies and oscillator strengths, and absorption spectra is undertaken using a multiband effective mass method which takes valence subband mixing into account. In addition the method is extended to study uniaxial stress and modulation doping effects. Finally, the binding energies and radiative lifetimes of bound excitons in direct gap semiconductors are studied in a simple model as a prelude to the study of bound excitons in quantum wells.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2011

Author dc:creator

• Sanders, Gary Donald

Contributors dc:contributor

• Chang, Yia-Chung

• semiconductor quantum wells
• GaAs-AlGaAs semiconductors
• subband mixing
• valence subband structure
• exciton binding
• oscillator strengths
• absorption spectra

Statement dc:rights

• 1985 Gary Donald Sanders

Language dc:language

en

Identifier

886558

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/25271