{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25271"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25271","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Electronic and optical properties of semiconductor quantum wells","abstract":"In this thesis we study electronic and optical properties of GaAs-AlGaAs semiconductors quantum wells. The light and heavy hole subbands are strongly hybridized and this subband mixing has important effects on electronic and optical properties. A systematic study of the mixing effects on valence subband structure, exciton binding energies and oscillator strengths, and absorption spectra is undertaken using a multiband effective mass method which takes valence subband mixing into account. In addition the method is extended to study uniaxial stress and modulation doping effects. Finally, the binding energies and radiative lifetimes of bound excitons in direct gap semiconductors are studied in a simple model as a prelude to the study of bound excitons in quantum wells.","abstract_html":"In this thesis we study electronic and optical properties of GaAs-AlGaAs semiconductors quantum wells. The light and heavy hole subbands are strongly hybridized and this subband mixing has important effects on electronic and optical properties. A systematic study of the mixing effects on valence subband structure, exciton binding energies and oscillator strengths, and absorption spectra is undertaken using a multiband effective mass method which takes valence subband mixing into account. In addition the method is extended to study uniaxial stress and modulation doping effects. Finally, the binding energies and radiative lifetimes of bound excitons in direct gap semiconductors are studied in a simple model as a prelude to the study of bound excitons in quantum wells.","abstract_has_math":false,"creators":["Sanders, Gary Donald"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Chang, Yia-Chung"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-06-03T17:59:41Z","date_published":"2011-06-03T17:59:41Z","updated_at":"2026-07-22T22:25:24Z","subjects":["semiconductor quantum wells","GaAs-AlGaAs semiconductors","subband mixing","valence subband structure","exciton binding","oscillator strengths","absorption spectra"],"languages":["en"],"rights":["1985 Gary Donald Sanders"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["886558"],"render_values":[{"text":"886558","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25271","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chang, Yia-Chung"]},{"key":"dc:creator","label":"Author","values":["Sanders, Gary Donald"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-06-03T17:59:41Z","10000-01-01","1985"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["semiconductor quantum wells","GaAs-AlGaAs semiconductors","subband mixing","valence subband structure","exciton binding","oscillator strengths","absorption spectra"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1985 Gary Donald Sanders"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["886558","http://hdl.handle.net/2142/25271"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this thesis we study electronic and optical properties of GaAs-AlGaAs semiconductors quantum wells. The light and heavy hole subbands are strongly hybridized and this subband mixing has important effects on electronic and optical properties. A systematic study of the mixing effects on valence subband structure, exciton binding energies and oscillator strengths, and absorption spectra is undertaken using a multiband effective mass method which takes valence subband mixing into account. In addition the method is extended to study uniaxial stress and modulation doping effects. Finally, the binding energies and radiative lifetimes of bound excitons in direct gap semiconductors are studied in a simple model as a prelude to the study of bound excitons in quantum wells.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-03T17:59:41Z No. of bitstreams: 1 1985_sanders.pdf: 3658255 bytes, checksum: f022caf8626682653a0de7ae69e92429 (MD5)","Made available in DSpace on 2011-06-03T17:59:41Z (GMT). No. of bitstreams: 1 1985_sanders.pdf: 3658255 bytes, checksum: f022caf8626682653a0de7ae69e92429 (MD5) Previous issue date: 1985","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-03T17:59:41Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:15:18-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Thesis","U of I Only"]},{"key":"dc:title","label":"Title","values":["Electronic and optical properties of semiconductor quantum wells"]}]}],"canonical_facts":{"dc:contributor":["Chang, Yia-Chung"],"dc:creator":["Sanders, Gary Donald"],"dc:date":["2011-06-03T17:59:41Z","10000-01-01","1985"],"dc:description":["In this thesis we study electronic and optical properties of GaAs-AlGaAs semiconductors quantum wells. The light and heavy hole subbands are strongly hybridized and this subband mixing has important effects on electronic and optical properties. A systematic study of the mixing effects on valence subband structure, exciton binding energies and oscillator strengths, and absorption spectra is undertaken using a multiband effective mass method which takes valence subband mixing into account. In addition the method is extended to study uniaxial stress and modulation doping effects. Finally, the binding energies and radiative lifetimes of bound excitons in direct gap semiconductors are studied in a simple model as a prelude to the study of bound excitons in quantum wells.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-03T17:59:41Z No. of bitstreams: 1 1985_sanders.pdf: 3658255 bytes, checksum: f022caf8626682653a0de7ae69e92429 (MD5)","Made available in DSpace on 2011-06-03T17:59:41Z (GMT). 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