1/f noise in semiconductors and metals

Properties of 1/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential on the noise kinetics in GaAs. A study of the statistical properties of l/f noise is presented, concentrating on sma11 (-1 J,lm2 surface area) semiconductor samples that produce three distinct types of non-Gaussian noise. Models for 1/f noise in S1 and GaAs are developed in light of these results.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2011

Author dc:creator

• Restle, Phillip John

Contributors dc:contributor

• Weissman, Michael B.

• low frequency resistance fluctuations
• 1/f noise
• semiconductors
• metals

Statement dc:rights

• Copyright 1986 Phillip John Restle

Language dc:language

en

Identifier

891641

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/25265