1/f noise in semiconductors and metals
type: CreativeWork
description: Properties of 1/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential on the noise kinetics in GaAs. A study of the statistical properties of l/f noise is presented, concentrating on sma11 (-1 J,lm2 surface area) semiconductor samples that produce three distinct types of non-Gaussian noise. Models for 1/f noise in S1 and GaAs are developed in light of these results.
abstract: Properties of 1/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential on the noise kinetics in GaAs. A study of the statistical properties of l/f noise is presented, concentrating on sma11 (-1 J,lm2 surface area) semiconductor samples that produce three distinct types of non-Gaussian noise. Models for 1/f noise in S1 and GaAs are developed in light of these results.
author: Restle, Phillip John
language: en
keywords: low frequency resistance fluctuations, 1/f noise, semiconductors, metals
date published: 2011-06-03T17:16:18Z
date modified: 2026-07-22T22:25:24Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois - Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/25265