Properties of 1/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential on the noise kinetics in GaAs. A study of the statistical properties of l/f noise is presented, concentrating on sma11 (-1 J,lm2 surface area) semiconductor samples that produce three distinct types of non-Gaussian noise. Models for 1/f noise in S1 and GaAs are developed in light of these results.
low frequency resistance fluctuations, 1/f noise, semiconductors, metals
University of Illinois - Urbana-Champaign
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