Spin-orbit scattering and E-field effects in discordered metals near the metal-insulator transition

The results of two studies of disordered metals near their metal-insulator transition are presented: (i) A detailed comparison of GexAu1-x and BxCu1-x is carried out in zero magnetic field. GeAu, a high Z material, has been shown to e xh1bit strong spin-orbit effects in a magnetic field while 8Cu, a low Z material, has been shown to exhibit weak spin-orbit effects. Both materials have similar temperature dependent de conductivity behavior in zero field and approximately linear mobility edges; CiilA detailed stud~ of the non-linear dc conductivitu of GeAu and Cx - Cu1-x is carried out for 1.3K<<T<4.2K and for E-fields up to 500V/ cm. Analyzing the o <E> data in the context of an electron gas heating model fields unphysically long electron relaxation times. Alternatively, the E-field can limit renormalization by raising the electron energy above the disordered potential. The s~stem then changes from quantum mechanical scaling to classically diffusive behavior beyond a certain length scale . The temperature and E-field data can then give the characteristic lengths and prefactors for the transition.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2011

Author dc:creator

• Osofsky, Michael Steven

Contributors dc:contributor

• Mochel, J.M.

• spin-orbit scattering
• E-field
• disordered metals
• metal-insulator transition

Statement dc:rights

• 1987 Michael Steven Osofsky

Language dc:language

en

Identifier

1411790

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/25213