{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25213"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25213","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Spin-orbit scattering and E-field effects in discordered metals near the metal-insulator transition","abstract":"The results of two studies of disordered metals near their metal-insulator transition are presented: (i) A detailed comparison of GexAu1-x and BxCu1-x is carried out in zero magnetic field. GeAu, a high Z material, has been shown to e xh1bit strong spin-orbit effects in a magnetic field while 8Cu, a low Z material, has been shown to exhibit weak spin-orbit effects. Both materials have similar temperature dependent de conductivity behavior in zero field and approximately linear mobility edges; CiilA detailed stud~ of the non-linear dc conductivitu of GeAu and Cx - Cu1-x is carried out for 1.3K<<T<4.2K and for E-fields up to 500V/ cm. Analyzing the o <E> data in the context of an electron gas heating model fields unphysically long electron relaxation times. Alternatively, the E-field can limit renormalization by raising the electron energy above the disordered potential. The s~stem then changes from quantum mechanical scaling to classically diffusive behavior beyond a certain length scale . The temperature and E-field data can then give the characteristic lengths and prefactors for the transition.","abstract_html":"The results of two studies of disordered metals near their metal-insulator transition are presented: (i) A detailed comparison of GexAu1-x and BxCu1-x is carried out in zero magnetic field. GeAu, a high Z material, has been shown to e xh1bit strong spin-orbit effects in a magnetic field while 8Cu, a low Z material, has been shown to exhibit weak spin-orbit effects. Both materials have similar temperature dependent de conductivity behavior in zero field and approximately linear mobility edges; CiilA detailed stud~ of the non-linear dc conductivitu of GeAu and Cx - Cu1-x is carried out for 1.3K&lt;&lt;T&lt;4.2K and for E-fields up to 500V/ cm. Analyzing the o &lt;E&gt; data in the context of an electron gas heating model fields unphysically long electron relaxation times. Alternatively, the E-field can limit renormalization by raising the electron energy above the disordered potential. The s~stem then changes from quantum mechanical scaling to classically diffusive behavior beyond a certain length scale . The temperature and E-field data can then give the characteristic lengths and prefactors for the transition.","abstract_has_math":false,"creators":["Osofsky, Michael Steven"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Mochel, J.M."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-06-02T14:57:10Z","date_published":"2011-06-02T14:57:10Z","updated_at":"2026-07-22T22:25:24Z","subjects":["spin-orbit scattering","E-field","disordered metals","metal-insulator transition"],"languages":["en"],"rights":["1987 Michael Steven Osofsky"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["1411790"],"render_values":[{"text":"1411790","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25213","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Mochel, J.M."]},{"key":"dc:creator","label":"Author","values":["Osofsky, Michael Steven"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-06-02T14:57:10Z","1987"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["spin-orbit scattering","E-field","disordered metals","metal-insulator transition"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["1987 Michael Steven Osofsky"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["1411790","http://hdl.handle.net/2142/25213"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The results of two studies of disordered metals near their metal-insulator transition are presented: (i) A detailed comparison of GexAu1-x and BxCu1-x is carried out in zero magnetic field. GeAu, a high Z material, has been shown to e xh1bit strong spin-orbit effects in a magnetic field while 8Cu, a low Z material, has been shown to exhibit weak spin-orbit effects. Both materials have similar temperature dependent de conductivity behavior in zero field and approximately linear mobility edges; CiilA detailed stud~ of the non-linear dc conductivitu of GeAu and Cx - Cu1-x is carried out for 1.3K<<T<4.2K and for E-fields up to 500V/ cm. Analyzing the o <E> data in the context of an electron gas heating model fields unphysically long electron relaxation times. Alternatively, the E-field can limit renormalization by raising the electron energy above the disordered potential. The s~stem then changes from quantum mechanical scaling to classically diffusive behavior beyond a certain length scale . The temperature and E-field data can then give the characteristic lengths and prefactors for the transition.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-02T14:57:10Z No. of bitstreams: 1 1987_osofsky.pdf: 7960079 bytes, checksum: f2cc1c2431a3870e313cdaf00653424f (MD5)","Made available in DSpace on 2011-06-02T14:57:10Z (GMT). No. of bitstreams: 1 1987_osofsky.pdf: 7960079 bytes, checksum: f2cc1c2431a3870e313cdaf00653424f (MD5) Previous issue date: 1987","Restriction data tranferred 2014-07-01T11:12:27-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-02T14:57:10Z Item is restricted indefinitely.","Open"]},{"key":"dc:title","label":"Title","values":["Spin-orbit scattering and E-field effects in discordered metals near the metal-insulator transition"]}]}],"canonical_facts":{"dc:contributor":["Mochel, J.M."],"dc:creator":["Osofsky, Michael Steven"],"dc:date":["2011-06-02T14:57:10Z","1987"],"dc:description":["The results of two studies of disordered metals near their metal-insulator transition are presented: (i) A detailed comparison of GexAu1-x and BxCu1-x is carried out in zero magnetic field. GeAu, a high Z material, has been shown to e xh1bit strong spin-orbit effects in a magnetic field while 8Cu, a low Z material, has been shown to exhibit weak spin-orbit effects. Both materials have similar temperature dependent de conductivity behavior in zero field and approximately linear mobility edges; CiilA detailed stud~ of the non-linear dc conductivitu of GeAu and Cx - Cu1-x is carried out for 1.3K<<T<4.2K and for E-fields up to 500V/ cm. Analyzing the o <E> data in the context of an electron gas heating model fields unphysically long electron relaxation times. Alternatively, the E-field can limit renormalization by raising the electron energy above the disordered potential. The s~stem then changes from quantum mechanical scaling to classically diffusive behavior beyond a certain length scale . The temperature and E-field data can then give the characteristic lengths and prefactors for the transition.","Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-02T14:57:10Z No. of bitstreams: 1 1987_osofsky.pdf: 7960079 bytes, checksum: f2cc1c2431a3870e313cdaf00653424f (MD5)","Made available in DSpace on 2011-06-02T14:57:10Z (GMT). No. of bitstreams: 1 1987_osofsky.pdf: 7960079 bytes, checksum: f2cc1c2431a3870e313cdaf00653424f (MD5) Previous issue date: 1987","Restriction data tranferred 2014-07-01T11:12:27-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-02T14:57:10Z Item is restricted indefinitely.","Open"],"dc:identifier":["1411790","http://hdl.handle.net/2142/25213"],"dc:language":["en"],"dc:rights":["1987 Michael Steven Osofsky"],"dc:subject":["spin-orbit scattering","E-field","disordered metals","metal-insulator transition"],"dc:title":["Spin-orbit scattering and E-field effects in discordered metals near the metal-insulator transition"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-22T22:25:24Z"}