Thermodynamics of disordered C1-xCux and Si1-xAux near the metal-insulator transition

Measurements of the electron-phonon relaxation time are carried out, using both a direct and indirect method, in three dimensional films of Cl-xCUx and Si1-xAUx in the temperature range 0.3K-4K. The electron-phonon resistance and thermal boundary resistance are also measured. The directly measured relaxation times for C1-zCUz can agree with theoretical predictions if a longitudinal sound speed similar to that of graphite and a longitudinal to transverse speed ratio similar to that of silicate glasses are used. The results for the Sh-zAUz only qualitatively agree with theory. The measured thermal resistances are in reasonable agreement with other experiments. Comparison of the direct and indirect measurements of the relaxation times reveal that the specific heat coefficient, behaves approximately like T-.6 in Cl-zCUz below lK, in qualitative agreement with current theories describing the behavior of disordered, interacting electrons near the metal-insulator transition.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• La Madrid, Marissa Alisangco

Contributors dc:contributor

• Mochel, J.M.

• thermodynamics
• metal-insulator transition
• electron-phonon relaxation time
• three dimensional films
• thermal boundary resistance

Statement dc:rights

• Copyright 1990 owned by Marissa Alisangco La Madrid

Language dc:language

eng

Identifier

3480361

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/25206