{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/25206"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/25206","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Thermodynamics of disordered C1-xCux and Si1-xAux near the metal-insulator transition","abstract":"Measurements of the electron-phonon relaxation time are carried out, using both a direct and indirect method, in three dimensional films of Cl-xCUx and Si1-xAUx in the temperature range 0.3K-4K. The electron-phonon resistance and thermal boundary resistance are also measured. The directly measured relaxation times for C1-zCUz can agree with theoretical predictions if a longitudinal sound speed similar to that of graphite and a longitudinal to transverse speed ratio similar to that of silicate glasses are used. The results for the Sh-zAUz only qualitatively agree with theory. The measured thermal resistances are in reasonable agreement with other experiments. Comparison of the direct and indirect measurements of the relaxation times reveal that the specific heat coefficient, behaves approximately like T-.6 in Cl-zCUz below lK, in qualitative agreement with current theories describing the behavior of disordered, interacting electrons near the metal-insulator transition.","abstract_html":"Measurements of the electron-phonon relaxation time are carried out, using both a direct and indirect method, in three dimensional films of Cl-xCUx and Si1-xAUx in the temperature range 0.3K-4K. The electron-phonon resistance and thermal boundary resistance are also measured. The directly measured relaxation times for C1-zCUz can agree with theoretical predictions if a longitudinal sound speed similar to that of graphite and a longitudinal to transverse speed ratio similar to that of silicate glasses are used. The results for the Sh-zAUz only qualitatively agree with theory. The measured thermal resistances are in reasonable agreement with other experiments. Comparison of the direct and indirect measurements of the relaxation times reveal that the specific heat coefficient, behaves approximately like T-.6 in Cl-zCUz below lK, in qualitative agreement with current theories describing the behavior of disordered, interacting electrons near the metal-insulator transition.","abstract_has_math":false,"creators":["La Madrid, Marissa Alisangco"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Mochel, J.M."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-06-01T16:08:32Z","date_published":"2011-06-01T16:08:32Z","updated_at":"2026-07-22T22:25:24Z","subjects":["thermodynamics","metal-insulator transition","electron-phonon relaxation time","three dimensional films","thermal boundary resistance"],"languages":["eng"],"rights":["Copyright 1990 owned by Marissa Alisangco La Madrid"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["3480361"],"render_values":[{"text":"3480361","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/25206","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Mochel, J.M."]},{"key":"dc:creator","label":"Author","values":["La Madrid, Marissa Alisangco"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-06-01T16:08:32Z","10000-01-01","1990"]},{"key":"dc:relation","label":"Dc Relation","values":["https://hdl.handle.net/2142/21613"]},{"key":"dc:type","label":"Dc Type","values":["text","Dissertation / Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["thermodynamics","metal-insulator transition","electron-phonon relaxation time","three dimensional films","thermal boundary resistance"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 owned by Marissa Alisangco La Madrid"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["3480361","http://hdl.handle.net/2142/25206"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Measurements of the electron-phonon relaxation time are carried out, using both a direct and indirect method, in three dimensional films of Cl-xCUx and Si1-xAUx in the temperature range 0.3K-4K. The electron-phonon resistance and thermal boundary resistance are also measured. The directly measured relaxation times for C1-zCUz can agree with theoretical predictions if a longitudinal sound speed similar to that of graphite and a longitudinal to transverse speed ratio similar to that of silicate glasses are used. The results for the Sh-zAUz only qualitatively agree with theory. The measured thermal resistances are in reasonable agreement with other experiments. Comparison of the direct and indirect measurements of the relaxation times reveal that the specific heat coefficient, behaves approximately like T-.6 in Cl-zCUz below lK, in qualitative agreement with current theories describing the behavior of disordered, interacting electrons near the metal-insulator transition.","Legacy dissertation","U of I Only"]},{"key":"dc:title","label":"Title","values":["Thermodynamics of disordered C1-xCux and Si1-xAux near the metal-insulator transition"]}]}],"canonical_facts":{"dc:contributor":["Mochel, J.M."],"dc:creator":["La Madrid, Marissa Alisangco"],"dc:date":["2011-06-01T16:08:32Z","10000-01-01","1990"],"dc:description":["Measurements of the electron-phonon relaxation time are carried out, using both a direct and indirect method, in three dimensional films of Cl-xCUx and Si1-xAUx in the temperature range 0.3K-4K. The electron-phonon resistance and thermal boundary resistance are also measured. The directly measured relaxation times for C1-zCUz can agree with theoretical predictions if a longitudinal sound speed similar to that of graphite and a longitudinal to transverse speed ratio similar to that of silicate glasses are used. The results for the Sh-zAUz only qualitatively agree with theory. The measured thermal resistances are in reasonable agreement with other experiments. Comparison of the direct and indirect measurements of the relaxation times reveal that the specific heat coefficient, behaves approximately like T-.6 in Cl-zCUz below lK, in qualitative agreement with current theories describing the behavior of disordered, interacting electrons near the metal-insulator transition.","Legacy dissertation","U of I Only"],"dc:identifier":["3480361","http://hdl.handle.net/2142/25206"],"dc:language":["eng"],"dc:relation":["https://hdl.handle.net/2142/21613"],"dc:rights":["Copyright 1990 owned by Marissa Alisangco La Madrid"],"dc:subject":["thermodynamics","metal-insulator transition","electron-phonon relaxation time","three dimensional films","thermal boundary resistance"],"dc:title":["Thermodynamics of disordered C1-xCux and Si1-xAux near the metal-insulator transition"],"dc:type":["text","Dissertation / Thesis"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:24Z"}