Generation and relaxation of nanometer-scale roughness on the germanium(001) surface

The surface morphology of Ge(001) during etching by low energy ions is characterized using scanning tunneling microscopy. The surfaces are bombarded by 240 eV xenon ions at various temperatures and exposure times. A well defined in-plane length scale is observed on the crystalline surfaces etched at $165270\sp\circ$C exhibit a regular pattern of pits. The isotropy of this pattern formation of pits argues against surface curvature dependent sputtering rate and suggests that asymmetric kinetics for the attachment of dimer vacancies at ascending and descending steps drive roughening during etching.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics, Condensed Matter

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Chey, S. Jay

Contributors dc:contributor

• Cahill, David G.

• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Chey, S. Jay

Language dc:language

eng

Identifier

9780591197709
AAI9712229
(UMI)AAI9712229

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23697