Kinetics and mechanisms of metal silicide formation

Kinetics and mechanisms of metastable (C49-TiSi$\sb2)$ and stable titanium disilicides (C54-TiSi$\sb2)$ have been investigated by thermally annealing Ti/polycrystalline Si bilayers using a combination of in situ sheet resistance measurement, in situ stress measurement, x-ray diffraction, transmission electron microscopy (TEM), scanning transmission electron microscopy, and Auger electron spectroscopy (AES). Studies of the initial stage of the C49-TiSi$\sb2$ formation during isothermal anneal at 530$\sp\circ$C and anneal at 10$\sp\circ$C/m show that the C49 phase first individually nucleates at the interface between amorphous silicide and crystalline silicon, then followed by rapid simultaneous lateral and vertical growth until the formation of a continuous layer of polycrystalline C49-TiSi$\sb2.$ Local chemical analysis indicates that the composition range of the amorphous silicide is narrowed due to the appearance of C49 phase.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Ma, Zhiyong

Contributors dc:contributor

• Allen, Leslie H.

• Engineering, Electronics and Electrical
• Engineering, Metallurgy
• Engineering, Materials Science

Statement dc:rights

• Copyright 1994 Ma, Zhiyong

Language dc:language

eng

Identifier

AAI9512472
(UMI)AAI9512472

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23420