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Showing 1 to 20 of 64 for “"silicide"”.
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Cobalt silicide characterization
… which leads to degraded device performances. Silicides can reduce sheet resistance on poly-silicon lines and shallow junctions. The mostly widely accepted silicide process, Titanium Silicide (TiSi2), was adopted because of its low resistivity. Major limitations of TiSi2 include an inability to …
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Marker studies of nickel silicide formation
… solid state formation of thin films of nickel silicides (Ni2Si and NiSi) from nickel and amorphous silicon has been investigated using 31Si radioactive tracer and inert marker techniques. Samples were prepared by vacuum deposition of thin films of nickel and silicon, followed by thermal …
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Kinetics and mechanisms of metal silicide formation
… (C49-TiSi$\sb2)$ and stable titanium disilicides (C54-TiSi$\sb2)$ have been investigated by thermally annealing Ti/polycrystalline Si bilayers using a combination of in situ sheet resistance measurement, in situ stress measurement, x-ray diffraction, transmission electron microscopy …
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Kinetic optimization of titanium silicide chemical vapor deposition
Titanium disilicide (TiSi$\sb 2$) has found widespread application as a material for transistor gate/source/drain contacts. Considerable interest has arisen in fabrication by chemical vapor deposition (CVD) because of scalability problems with the salicide process (a Ti-Si solid-phase reaction) …
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X-Ray Diffraction Studies of Palladium-Silicide Thin Films
The growth of Pd(,2)Si thin films from electron beam evaporated Pd films on Si(lll) substrates has been studied using X-ray diffraction techniques. In situ layer growth kinetics were measured over a temperature range of 160-222(DEGREES)C using an X-ray integrated intensity approach. Mosaic …
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Structure and epitaxy studies of cobalt silicide/silicon heterostructures
… locally enhanced silicon and cobalt diffusion, silicide spike formation during CoSi thin film growth, and volumetric contractions during the CoSi $\to$ CoSi$\sb2$ phase transformation. Multilayer Si$\sb{\rm a}$/Co/Si$\sb{\rm c}$ thin film deposition is an effective processing technique for …
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Chemical kinetic studies of titanium silicide chemical vapor deposition
Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:48:04Z Item is restricted indefinitely.
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An in Situ Study of the Stresses in Silicide Thin Films
… it is possible to observe changes in stress of silicide materials during various stages of film fabrication, as well as assess the character of the silicon substrate. Also another novel technique utilizing conventional x-rays is presented which allows one to determine the growth kinetics of a …
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Low energy ion beam modification of the titanium silicide (100) reaction
This research investigated the effects of the ion beam assisted deposition process on the interdiffusion and reaction of Ti thin films deposited on Si (100). The analytical techniques employed for the characterization of these thin films included transmission electron microscopy, scanning electron …
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Investigation of Thin Film Cobalt Silicide Formation on Thermal Oxide Barrier Layers
No abstract prepared.
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Investigation of thin film cobalt silicide formation on thermal oxide barrier layers
No abstract prepared.
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Thermal Properties of Indium Nanoparticles and Gold Silicide Formation by Scanning Nanocalorimetry
The silicide study focuses on phase formation in Au-Si thin films. The unique finding is to determine the melting temperature of metastable phase using calorimetry, which is ∼60°C below the eutectic melting point (363°C). The heat of fusion (26.4 kJ/mol) of the metastable phase has also …
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TEM Study of a RTO Oxide-Interfacial Layer on Epitaxial-Cobalt Silicide (CoSi2) Formation
Metal silicides have been used for some time as a contact diffusion barrier. CoSi2 has been attracting a lot of interest due to its low sheet resistance, thermal stability, low stress state and interfacial uniformity with the silicon substrate. Recently, there has been many studies to investigate …
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Reaction Path and Crystallograpy of Cobalt Silicide Formation on Silicon(001) by Reaction Deposition Epitaxy
I show that high-flux low-energy Ar+ ion irradiation during RDE growth dramatically increases the area fraction of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio JAr+/JCo of the incident Ar> to Co fluxes is 1.4 to 0.72 with JAr+/JCo= …
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Exploratory Investigation of Erbium Silicide NMOS as a Candidate for a Schottky Barrier CMOS Process
… transistors using both platinum and erbium silicide are fabricated and their performance compared. Processing issues, including erbium's reactivity with oxide and tendency to creep, and how they affect the NMOS performance, are discussed.
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Growth of amorphous tungsten silicide and study of the proximity effect at low dimensions for superconducting applications
… niobium nitride (NbN) and amorphous tungsten silicide (WSi). These hybrid devices use the proximity effect to potentially be more efficient than either of the materials alone. In order to make these devices, we first grew high quality samples of tungsten silicide and characterized them before …
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