Back to results
University of Illinois at Urbana-Champaign
Modeling and simulation ofpMOSFET hot-carrier degradation in very large CMOS circuits
Abstract
dc:descriptionThe goals of the research work presented in this thesis are to model submicron pMOS transistor hot-carrier degradation and to develop a fast reliability simulation tool for hot-carrier reliability analysis of CMOS VLSI circuits. This simulator should be able to handle very large submicrometer circuits accurately and efficiently.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical and Computer Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Sun, Weishi
- Contributors dc:contributor
-
- Kang, Sung Mo
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1995 Sun, Weishi
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9624504
(UMI)AAI9624504 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/23180