Impurity-induced layer disordering of quantum well heterostructures by silicon diffusion from aluminum-reduced silicon dioxide and silicon nitride

In these experiments, impurity-induced layer disordering (IILD) utilizing the chemical reduction of SiO$\sb2$ by Al (from high-percentage Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As) is employed to produce Si and O to effect layer disordering. This diffusion process is examined using secondary ion mass spectroscopy (SIMS) for both closed and open-tube anneal configurations. The thermal stability of strained-layer Al$\sb{\rm y}$Ga$\sb{\rm 1-y}$As-GaAs-In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As quantum well heterostructures is examined using SIMS, transmission electron microscopy (TEM), and photoluminescence (PL) measurements. On samples with acceptable thermal stability, data are presented on both single- and multi-stripe buried heterostructure laser diodes fabricated via Si-O IILD. The stability of a strained-layer In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As quantum well (QW) near critical thickness is examined under high-power, continuous-wave (cw) laser operation in a 10-stripe array fabricated via hydrogenation.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Major, Jo Stephen, Jr

• Engineering, Electronics and Electrical
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1990 Major, Jo Stephen, Jr

Language dc:language

eng

Identifier

AAI9114331
(UMI)AAI9114331

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23115