{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/23115"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/23115","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Impurity-induced layer disordering of quantum well heterostructures by silicon diffusion from aluminum-reduced silicon dioxide and silicon nitride","abstract":"In these experiments, impurity-induced layer disordering (IILD) utilizing the chemical reduction of SiO$\\sb2$ by Al (from high-percentage Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As) is employed to produce Si and O to effect layer disordering. This diffusion process is examined using secondary ion mass spectroscopy (SIMS) for both closed and open-tube anneal configurations. The thermal stability of strained-layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well heterostructures is examined using SIMS, transmission electron microscopy (TEM), and photoluminescence (PL) measurements. On samples with acceptable thermal stability, data are presented on both single- and multi-stripe buried heterostructure laser diodes fabricated via Si-O IILD. The stability of a strained-layer In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well (QW) near critical thickness is examined under high-power, continuous-wave (cw) laser operation in a 10-stripe array fabricated via hydrogenation.","abstract_html":"In these experiments, impurity-induced layer disordering (IILD) utilizing the chemical reduction of SiO$\\sb2$ by Al (from high-percentage Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As) is employed to produce Si and O to effect layer disordering. This diffusion process is examined using secondary ion mass spectroscopy (SIMS) for both closed and open-tube anneal configurations. The thermal stability of strained-layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well heterostructures is examined using SIMS, transmission electron microscopy (TEM), and photoluminescence (PL) measurements. On samples with acceptable thermal stability, data are presented on both single- and multi-stripe buried heterostructure laser diodes fabricated via Si-O IILD. The stability of a strained-layer In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well (QW) near critical thickness is examined under high-power, continuous-wave (cw) laser operation in a 10-stripe array fabricated via hydrogenation.","abstract_has_math":true,"creators":["Major, Jo Stephen, Jr"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T14:02:43Z","date_published":"2011-05-07T14:02:43Z","updated_at":"2026-07-22T22:25:21Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter"],"languages":["eng"],"rights":["Copyright 1990 Major, Jo Stephen, Jr"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9114331","(UMI)AAI9114331"],"render_values":[{"text":"AAI9114331","href":null,"code":true},{"text":"(UMI)AAI9114331","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/23115","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Major, Jo Stephen, Jr"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T14:02:43Z","10000-01-01","1990"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 Major, Jo Stephen, Jr"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9114331","(UMI)AAI9114331","http://hdl.handle.net/2142/23115"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In these experiments, impurity-induced layer disordering (IILD) utilizing the chemical reduction of SiO$\\sb2$ by Al (from high-percentage Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As) is employed to produce Si and O to effect layer disordering. This diffusion process is examined using secondary ion mass spectroscopy (SIMS) for both closed and open-tube anneal configurations. The thermal stability of strained-layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well heterostructures is examined using SIMS, transmission electron microscopy (TEM), and photoluminescence (PL) measurements. On samples with acceptable thermal stability, data are presented on both single- and multi-stripe buried heterostructure laser diodes fabricated via Si-O IILD. The stability of a strained-layer In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well (QW) near critical thickness is examined under high-power, continuous-wave (cw) laser operation in a 10-stripe array fabricated via hydrogenation.","Data are presented describing Si IILD and Al-Ga interdiffusion in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum well heterostructures (QWHs) using an open tube rapid thermal anneal (RTA) furnace (900-1000$\\sp\\circ$C). The data show that Al-Ga interdiffusion is enhanced by n-type doping and suppressed by p-type doping. By surrounding the active layers of the structure with layers of opposite doping, the data demonstrate that the surrounding layers modify Al-Ga interdiffusion by controlling the diffusion and the solubility of the point defects responsible for layer disordering. The data show that for both n-type and p-type dopings, a SiO$\\sb2$ encapsulant enhances interdiffusion as compared to Si$\\sb3$N$\\sb4$. Silicon IILD is also investigated in the open-tube, As-poor annealing regime. To achieve appreciable Si diffusion under these conditions requires the removal of the GaAs cap and the use of Al-reduced SiO$\\sb2$ or Si$\\sb3$N$\\sb4$ as a Si diffusion source.","Made available in DSpace on 2011-05-07T14:02:43Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9114331.pdf: 3099707 bytes, checksum: e1f010f193af74b165466b15a0bcdccb (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:02:16Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:29:36-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Impurity-induced layer disordering of quantum well heterostructures by silicon diffusion from aluminum-reduced silicon dioxide and silicon nitride"]}]}],"canonical_facts":{"dc:creator":["Major, Jo Stephen, Jr"],"dc:date":["2011-05-07T14:02:43Z","10000-01-01","1990"],"dc:description":["In these experiments, impurity-induced layer disordering (IILD) utilizing the chemical reduction of SiO$\\sb2$ by Al (from high-percentage Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As) is employed to produce Si and O to effect layer disordering. This diffusion process is examined using secondary ion mass spectroscopy (SIMS) for both closed and open-tube anneal configurations. The thermal stability of strained-layer Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well heterostructures is examined using SIMS, transmission electron microscopy (TEM), and photoluminescence (PL) measurements. On samples with acceptable thermal stability, data are presented on both single- and multi-stripe buried heterostructure laser diodes fabricated via Si-O IILD. The stability of a strained-layer In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well (QW) near critical thickness is examined under high-power, continuous-wave (cw) laser operation in a 10-stripe array fabricated via hydrogenation.","Data are presented describing Si IILD and Al-Ga interdiffusion in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum well heterostructures (QWHs) using an open tube rapid thermal anneal (RTA) furnace (900-1000$\\sp\\circ$C). The data show that Al-Ga interdiffusion is enhanced by n-type doping and suppressed by p-type doping. By surrounding the active layers of the structure with layers of opposite doping, the data demonstrate that the surrounding layers modify Al-Ga interdiffusion by controlling the diffusion and the solubility of the point defects responsible for layer disordering. The data show that for both n-type and p-type dopings, a SiO$\\sb2$ encapsulant enhances interdiffusion as compared to Si$\\sb3$N$\\sb4$. Silicon IILD is also investigated in the open-tube, As-poor annealing regime. To achieve appreciable Si diffusion under these conditions requires the removal of the GaAs cap and the use of Al-reduced SiO$\\sb2$ or Si$\\sb3$N$\\sb4$ as a Si diffusion source.","Made available in DSpace on 2011-05-07T14:02:43Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9114331.pdf: 3099707 bytes, checksum: e1f010f193af74b165466b15a0bcdccb (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:02:16Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:29:36-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9114331","(UMI)AAI9114331","http://hdl.handle.net/2142/23115"],"dc:language":["eng"],"dc:rights":["Copyright 1990 Major, Jo Stephen, Jr"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Condensed Matter"],"dc:title":["Impurity-induced layer disordering of quantum well heterostructures by silicon diffusion from aluminum-reduced silicon dioxide and silicon nitride"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:21Z"}