Growth and characterization of indium gallium phosphide on gallium arsenide by gas-source molecular beam epitaxy system and its applications to heterostructures

InGaP/GaAs system presents an attractive alternative to GaAs/AlGaAs system for heterojunction devices because of its unique heterojunction properties, wide band gap of about 1.90 eV for the lattice matched composition and absence of oxidation problems typical for AlGaAs. However, the growth of InGaP requires the use of phosphine, which necessitated the use of Gas Source Molecular Beam Epitaxy (GSMBE). The gases involved are very hazardous, extremely toxic, highly inflammable and explosive at elevated temperatures. Adequate care has been taken for the safe use of these gases so that this attractive technique is properly utilized. The GSMBE system is equipped with a central alarm command system with audio-visual alarms for a variety of monitored conditions and interlocks for automatic shutdown.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Engineering, Electronics and Electrical

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Biswas, Dhrubes

Contributors dc:contributor

• Morkoc, Hadis

• Engineering, Electronics and Electrical
• Engineering, Materials Science

Statement dc:rights

• Copyright 1993 Biswas, Dhrubes

Language dc:language

eng

Identifier

AAI9328974
(UMI)AAI9328974

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22963