{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22963"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22963","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth and characterization of indium gallium phosphide on gallium arsenide by gas-source molecular beam epitaxy system and its applications to heterostructures","abstract":"InGaP/GaAs system presents an attractive alternative to GaAs/AlGaAs system for heterojunction devices because of its unique heterojunction properties, wide band gap of about 1.90 eV for the lattice matched composition and absence of oxidation problems typical for AlGaAs. However, the growth of InGaP requires the use of phosphine, which necessitated the use of Gas Source Molecular Beam Epitaxy (GSMBE). The gases involved are very hazardous, extremely toxic, highly inflammable and explosive at elevated temperatures. Adequate care has been taken for the safe use of these gases so that this attractive technique is properly utilized. The GSMBE system is equipped with a central alarm command system with audio-visual alarms for a variety of monitored conditions and interlocks for automatic shutdown.","abstract_html":"InGaP/GaAs system presents an attractive alternative to GaAs/AlGaAs system for heterojunction devices because of its unique heterojunction properties, wide band gap of about 1.90 eV for the lattice matched composition and absence of oxidation problems typical for AlGaAs. However, the growth of InGaP requires the use of phosphine, which necessitated the use of Gas Source Molecular Beam Epitaxy (GSMBE). The gases involved are very hazardous, extremely toxic, highly inflammable and explosive at elevated temperatures. Adequate care has been taken for the safe use of these gases so that this attractive technique is properly utilized. The GSMBE system is equipped with a central alarm command system with audio-visual alarms for a variety of monitored conditions and interlocks for automatic shutdown.","abstract_has_math":false,"creators":["Biswas, Dhrubes"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Engineering, Electronics and Electrical","degree_department":null,"school":null,"contributors":["Morkoc, Hadis"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:57:22Z","date_published":"2011-05-07T13:57:22Z","updated_at":"2026-07-22T22:25:21Z","subjects":["Engineering, Electronics and Electrical","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1993 Biswas, Dhrubes"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9328974","(UMI)AAI9328974"],"render_values":[{"text":"AAI9328974","href":null,"code":true},{"text":"(UMI)AAI9328974","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22963","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Morkoc, Hadis"]},{"key":"dc:creator","label":"Author","values":["Biswas, Dhrubes"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:57:22Z","10000-01-01","1993"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Engineering, Electronics and Electrical","Engineering, Materials Science"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1993 Biswas, Dhrubes"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9328974","(UMI)AAI9328974","http://hdl.handle.net/2142/22963"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["InGaP/GaAs system presents an attractive alternative to GaAs/AlGaAs system for heterojunction devices because of its unique heterojunction properties, wide band gap of about 1.90 eV for the lattice matched composition and absence of oxidation problems typical for AlGaAs. However, the growth of InGaP requires the use of phosphine, which necessitated the use of Gas Source Molecular Beam Epitaxy (GSMBE). The gases involved are very hazardous, extremely toxic, highly inflammable and explosive at elevated temperatures. Adequate care has been taken for the safe use of these gases so that this attractive technique is properly utilized. The GSMBE system is equipped with a central alarm command system with audio-visual alarms for a variety of monitored conditions and interlocks for automatic shutdown.","Samples studied were grown on (100) GaAs substrates under various growth conditions. Reproducible growth conditions have been established with respect to optimisation of pressure and temperature so as to achieve good material properties. Structural characterization using X ray has been carried out for the determination of material composition and evaluation of crystal quality. Very narrow full width at half maxima values indicated good crystal quality. Additionally, cross-sectional TEM has shown smooth heterointerface. Subsequent to this, good hall mobility at room temperature and at 77K, confirmed the material quality. Photoluminescence has been utilized for the evaluation of the E$\\sb0$ gap. The PL exhibited very narrow full width at half maxima for lattice matched composition. Apart from evaluation of the E$\\sb1$ gap, spectroscopic ellipsometry has been used to investigate the compositional dependence of the E$\\sb1$ gap (and its broadening).","P-type modulation doped heterostructures has been implemented using InGaP/GaAs, demonstrating two dimensional hole gas (2DHG) with good p-type hole mobilities measured from room temperature up to very low temperatures. The approximate constant value of mobility in the low temperature region strongly confirms the presence of 2DHG. A simple model has been formulated for the estimation of valence band discontinuity from the measured 2DHG data at cryogenic temperatures. Heterostructure Bipolar Transistor has been demonstrated using InGaP/GaAs system with the realisation of good current gain and low offset voltages. The double heterostructure bipolar transistor showed even smaller offset voltages. The classical V$\\sb{CE}$ versus I$\\sb{c}$ plots and gummel plots for the devices shows an ideality factor close to unity for I$\\sb{c}$ and other usual characteristic features.","Made available in DSpace on 2011-05-07T13:57:22Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9328974.pdf: 3394547 bytes, checksum: e381a7c98ac8a17a90ed4550892b4bcc (MD5) Previous issue date: 1993","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:01:13Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:29:02-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Growth and characterization of indium gallium phosphide on gallium arsenide by gas-source molecular beam epitaxy system and its applications to heterostructures"]}]}],"canonical_facts":{"dc:contributor":["Morkoc, Hadis"],"dc:creator":["Biswas, Dhrubes"],"dc:date":["2011-05-07T13:57:22Z","10000-01-01","1993"],"dc:description":["InGaP/GaAs system presents an attractive alternative to GaAs/AlGaAs system for heterojunction devices because of its unique heterojunction properties, wide band gap of about 1.90 eV for the lattice matched composition and absence of oxidation problems typical for AlGaAs. However, the growth of InGaP requires the use of phosphine, which necessitated the use of Gas Source Molecular Beam Epitaxy (GSMBE). The gases involved are very hazardous, extremely toxic, highly inflammable and explosive at elevated temperatures. Adequate care has been taken for the safe use of these gases so that this attractive technique is properly utilized. The GSMBE system is equipped with a central alarm command system with audio-visual alarms for a variety of monitored conditions and interlocks for automatic shutdown.","Samples studied were grown on (100) GaAs substrates under various growth conditions. Reproducible growth conditions have been established with respect to optimisation of pressure and temperature so as to achieve good material properties. Structural characterization using X ray has been carried out for the determination of material composition and evaluation of crystal quality. Very narrow full width at half maxima values indicated good crystal quality. Additionally, cross-sectional TEM has shown smooth heterointerface. Subsequent to this, good hall mobility at room temperature and at 77K, confirmed the material quality. Photoluminescence has been utilized for the evaluation of the E$\\sb0$ gap. The PL exhibited very narrow full width at half maxima for lattice matched composition. Apart from evaluation of the E$\\sb1$ gap, spectroscopic ellipsometry has been used to investigate the compositional dependence of the E$\\sb1$ gap (and its broadening).","P-type modulation doped heterostructures has been implemented using InGaP/GaAs, demonstrating two dimensional hole gas (2DHG) with good p-type hole mobilities measured from room temperature up to very low temperatures. The approximate constant value of mobility in the low temperature region strongly confirms the presence of 2DHG. A simple model has been formulated for the estimation of valence band discontinuity from the measured 2DHG data at cryogenic temperatures. Heterostructure Bipolar Transistor has been demonstrated using InGaP/GaAs system with the realisation of good current gain and low offset voltages. The double heterostructure bipolar transistor showed even smaller offset voltages. The classical V$\\sb{CE}$ versus I$\\sb{c}$ plots and gummel plots for the devices shows an ideality factor close to unity for I$\\sb{c}$ and other usual characteristic features.","Made available in DSpace on 2011-05-07T13:57:22Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9328974.pdf: 3394547 bytes, checksum: e381a7c98ac8a17a90ed4550892b4bcc (MD5) Previous issue date: 1993","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:01:13Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:29:02-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9328974","(UMI)AAI9328974","http://hdl.handle.net/2142/22963"],"dc:language":["eng"],"dc:rights":["Copyright 1993 Biswas, Dhrubes"],"dc:subject":["Engineering, Electronics and Electrical","Engineering, Materials Science"],"dc:title":["Growth and characterization of indium gallium phosphide on gallium arsenide by gas-source molecular beam epitaxy system and its applications to heterostructures"],"dc:type":["text"],"thesis:degree_discipline":["Engineering, Electronics and Electrical","Engineering, Materials Science"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:21Z"}