The growth and characterization of III-V compound semiconductor materials by metalorganic chemical vapor deposition and laser photochemical vapor deposition

Despite the vast use of metalorganic chemical vapor deposition (MOCVD) for the growth of optical and electronic devices, it is a process for which the details of the reaction mechanisms are not well understood. Efforts aimed at gaining insight into growth-related matters will be described here and involve deposition in both the low temperature, kinetically-controlled growth regime ($<$600$\sp\circ$C) as well as the conventional, diffusion-limited growth regime (600-800$\sp\circ$C). For deposition at lower temperatures, an ultraviolet excimer laser is used to assist in the growth of GaAs, motivated by the fact that the common MOCVD precursors such as trimethylgallium and arsine are absorbing in the ultraviolet region of the spectrum. Progress toward obtaining device quality material with growth at reduced substrate temperatures in the presence of laser irradiation is assessed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• York, Pamela Kay

Contributors dc:contributor

• Coleman, James J.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1990 York, Pamela Kay

Language dc:language

eng

Identifier

AAI9026362
(UMI)AAI9026362

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22864