Low-temperature growth of silicon and silicon-germanium alloy by ultrahigh vacuum ion-beam sputter deposition

The use of energetic (average energy $\simeq$ 18 eV), rather than thermal, Si beams increased Si(001) epitaxial thicknesses t$\rm\sb{e}$ by up to an order of magnitude over the growth temperature range $\rm T\sb{s}=80{-}300\sp\circ$C yielding t$\rm\sb{e}$ = 10 nm-1.2 μm at a growth rate R = 0.1 nm-s$\sp{-1}$. The overall increase in t$\rm\sb{e}$ is attributed primarily to more effective filling of interisland trenches which form during growth in the low adatom mobility two-dimensional multilayer mode and which provide preferential sites for the nucleation of the terminal amorphous phase. The evolution of surface roughness was found to be inconsistent with conventional scaling and hyperscaling laws and led to the formation of mounds separated by a well-defined length scale. In addition, Sb doping $\rm(\langle E\sb{Sb}\rangle\simeq14$ eV), corresponding to a steady-state surface coverage of only ${\simeq}4\times10\sp{-5}$ ML leading to bulk concentration of ${\simeq}2\times10\sp{18}$ cm$\sp{-3}$, at $\rm T\sb{s}=250{-}300\sp\circ$C increased the rate of surface roughening and decreased epitaxial thickness t$\rm\sb{e}$ by a factor of $\sbsp{>}{\sim}$2.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Lee, Nae-Eung

Contributors dc:contributor

• Greene, Joseph E.

• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Lee, Nae-Eung

Language dc:language

eng

Identifier

9780591088199
AAI9702576
(UMI)AAI9702576

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22752