Low-temperature growth of silicon and silicon-germanium alloy by ultrahigh vacuum ion-beam sputter deposition
type: CreativeWork
description: The use of energetic (average energy $\simeq$ 18 eV), rather than thermal, Si beams increased Si(001) epitaxial thicknesses t$\rm\sb{e}$ by up to an order of magnitude over the growth temperature range $\rm T\sb{s}=80{-}300\sp\circ$C yielding t$\rm\sb{e}$ = 10 nm-1.2 $\mu$m at a growth rate R = 0.1 nm-s$\sp{-1}$. The overall increase in t$\rm\sb{e}$ is attributed primarily to more effective filling of interisland trenches which form during growth in the low adatom mobility two-dimensional multilayer mode and which provide preferential sites for the nucleation of the terminal amorphous phase. The evolution of surface roughness was found to be inconsistent with conventional scaling and hyperscaling laws and led to the formation of mounds separated by a well-defined length scale. In addition, Sb doping $\rm(\langle E\sb{Sb}\rangle\simeq14$ eV), corresponding to a steady-state surface coverage of only ${\simeq}4\times10\sp{-5}$ ML leading to bulk concentration of ${\simeq}2\times10\sp{18}$ cm$\sp{-3}$, at $\rm T\sb{s}=250{-}300\sp\circ$C increased the rate of surface roughening and decreased epitaxial thickness t$\rm\sb{e}$ by a factor of $\sbsp{>}{\sim}$2.
abstract: The use of energetic (average energy $\simeq$ 18 eV), rather than thermal, Si beams increased Si(001) epitaxial thicknesses t$\rm\sb{e}$ by up to an order of magnitude over the growth temperature range $\rm T\sb{s}=80{-}300\sp\circ$C yielding t$\rm\sb{e}$ = 10 nm-1.2 $\mu$m at a growth rate R = 0.1 nm-s$\sp{-1}$. The overall increase in t$\rm\sb{e}$ is attributed primarily to more effective filling of interisland trenches which form during growth in the low adatom mobility two-dimensional multilayer mode and which provide preferential sites for the nucleation of the terminal amorphous phase. The evolution of surface roughness was found to be inconsistent with conventional scaling and hyperscaling laws and led to the formation of mounds separated by a well-defined length scale. In addition, Sb doping $\rm(\langle E\sb{Sb}\rangle\simeq14$ eV), corresponding to a steady-state surface coverage of only ${\simeq}4\times10\sp{-5}$ ML leading to bulk concentration of ${\simeq}2\times10\sp{18}$ cm$\sp{-3}$, at $\rm T\sb{s}=250{-}300\sp\circ$C increased the rate of surface roughening and decreased epitaxial thickness t$\rm\sb{e}$ by a factor of $\sbsp{>}{\sim}$2.
author: Lee, Nae-Eung
language: eng
keywords: Engineering, Materials Science
date published: 2011-05-07T13:50:18Z
date modified: 2026-07-22T22:25:20Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/22752