Metalorganic chemical vapor deposition, ion beam mixing, and selective epitaxy of III-V semiconductors

Metalorganic Chemical Vapor Deposition (MOCVD) is a versatile growth technique commonly used to grow III-V compound semiconductor materials. A review of many seminal studies investigating the growth mechanisms of GaAs epitaxial growth is presented. Carbon is an intrinsic impurity in GaAs and AlGaAs grown by MOCVD and a number of growth variables can be modified to minimize impurity levels. Results will be presented illustrating a new dependence of background carbon levels on growth temperature in AlGaAs. These data are discussed qualitatively in terms of existing models for GaAs growth and carbon incorporation.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

1995

Author dc:creator

• Forbes, David Vincent

Contributors dc:contributor

• Coleman, James J.

• Engineering, Electronics and Electrical
• Engineering, Materials Science

Statement dc:rights

• Copyright 1995 Forbes, David Vincent

Language dc:language

eng

Identifier

AAI9543587
(UMI)AAI9543587

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22704