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Showing 1 to 20 of 35 for “"III-V compound semiconductor"”.
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III-V compound semiconductor selective area epitaxy on silicon substrates
In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems given the high electron mobility that the III-V semiconductors have. Higher electron transport properties than silicon enable the …
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Characterization of reactive ion etching of III-V compound semiconductor materials
Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for …
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Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition
III-V compound semiconductor materials have had much attention because of their application to high speed electronic and optoelectronic devices. For achieving these purposes, it is required to produce high quality samples with uniform layer thickness, no defects, and abrupt interfaces. For this …
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Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition
Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of …
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Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01
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III-V compound semiconductor integrated charge storage structures for dynamic and non-volatile memory elements.
… of dynamic and nonvolatile memories in III-V compound semiconductors. Currently, III-V semiconductor storage devices consist only of capacitors, where data is destroyed during reading and electrical erasure is difficult. In this work, four devices types were demonstrated that exhibit …
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Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection
There are considerable interests in the use of infrared (IR) photodetectors, in particular mid- and long-wavelength IR detection, for diverse scientific, civil, and military applications. Devices based on the InAs/GaSb or InAs/InAsSb strained-layer-superlattices (SLSs) have gained special attention …
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In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first …
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Chemical beam, gas-source molecular beam, and molecular beam epitaxial growth of III/V compound semiconductor materials
A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new …
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An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits
… integrated circuits (OEICs) has focused on III-V compound semiconductors such as GaAs-based and InP-based materials because of their superior electronic properties over those of silicon. Recent advances in the fields of Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy …
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The growth and characterization of III-V compound semiconductor materials by metalorganic chemical vapor deposition and laser photochemical vapor deposition
Despite the vast use of metalorganic chemical vapor deposition (MOCVD) for the growth of optical and electronic devices, it is a process for which the details of the reaction mechanisms are not well understood. Efforts aimed at gaining insight into growth-related matters will be described here and …
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Metalorganic chemical vapor deposition, ion beam mixing, and selective epitaxy of III-V semiconductors
… versatile growth technique commonly used to grow III-V compound semiconductor materials. A review of many seminal studies investigating the growth mechanisms of GaAs epitaxial growth is presented. Carbon is an intrinsic impurity in GaAs and AlGaAs grown by MOCVD and a number of growth variables …
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Growth and characterization of mid-infrared phosphide-based semiconductor diode lasers
… industrial-important gas sensing. Antimony-based III-V compound semiconductor material is the most prominent pseudomorphic epitaxy candidate for this application. However, phosphide-based material not only has the potential to reach this wavelength utilizing a strained active region but also takes …
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Quantum well devices fabricated using selective area growth and their application in optical fiber communication
… and apply it to both discrete and integrated III-V compound semiconductor photonic devices. The prediction is compared with the experimental results and discussed in details.
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Engineering strain-induced self-rolling semiconductor tubes through geometry and patterning
… strained bilayer mesa on the physical shape of semiconductor nanotubes, which is essential for precise positioning and uniform large area assembly. Experimental and simulation results of the rolling behavior of tubes are discussed for various geometries. The study attempts to understand the …
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Direct tunneling modulation and signal mixing of semiconductor lasers
… device that bridges the gap between high-speed III-V compound semiconductor transistors and high-speed semiconductor lasers. In a highly integrated fashion, the transistor laser is capable of simultaneous transistor electrical operation and electron-to-photon conversion. The three-terminal …
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Processing and characterization of contacts on MBE-grown gallium nitride
Gallium nitride, a III-V compound semiconductor, is a good candidate for applications such as blue laser diodes and power devices due to its wide bandgap. One of the main challenges related to this compound is the growth of high quality crystals. If crystals with high level of purity are grown, the …
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Photo-Hall studies of compound semiconductors
The III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave device applications. Temperature dependent photo-Hall effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy …
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Theoretical studies of electron dynamics and relaxation in photoexcited quantum well structures
The III-V compound semiconductor devices employing quantum well (QW) structures play an essential role in the field of optoelectronics. This thesis focuses on the quantum mechanical aspects of electron dynamics and relaxation (or capture) in QW structures with particular attention paid to …
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